Analysis of Radio Frequency Performance on GaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor which Applicable for Green Energy System Applications

机译：GaAs / Ingaas异质结隧道场效应晶体管射频性能分析，适用于绿色能源系统应用

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We have proposed a tunneling field-effect transistor (TFET) having a GaAs/InGaAs heterojunction structure for radio frequency (RF) application. The GaAs/InGaAs heterojunction TFETs are investigated in terms of DC and RF characteristics by using the device simulation technology. The proposed TFET showed excellent subthreshold swing (S) and on/off current ratio as low standby power (LSTP) devices. Moreover, the superb RF performances of proposed TFET were obtained by designing drain doping (DDrain). It was confirmed that the GaAs/InGaAs heterojunction TFET is suitable for RF applications.

机译：我们提出了一种隧道场效应晶体管（TFET），其具有用于射频（RF）应用的GaAs / InGaAs异质结结构。通过使用器件仿真技术，根据DC和RF特性来研究GaAs / Ingaas异质结TFET。所提出的TFET显示出优异的亚阈值摆动和ON / OFF电流比，以及低待机功率（LSTP）器件。此外，通过设计漏极掺杂（DDRAIN）获得所提出的TFET的SuperB RF性能。确认GaAs / Ingaas异质结TFET适用于RF应用。

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《International Conference on Measuring Technology and Mechatronics Automation》|2014年||共4页
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Yoon Young Jun; Seo Jae Hwa; Lee Hwan Gi; Yoo Gwan Min;
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中图分类 TP216;
关键词
Cut-off Frequency; Device simulator; Heterojunction Structure; Radio Frequency; Subthreshold swing; Tunneling Field-Effect Transistor;

机译：截止频率;设备模拟器;异质结结构;射频;亚阈值摆动;隧道场效应晶体管;

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1. Performance Evaluation of Novel Strain-Engineered Ge-InGaAs Heterojunction Tunnel Field-Effect Transistors [J] . Liu Jheng-Sin, Clavel Michael B., Hudait Mantu K. Electron Devices, IEEE Transactions on . 2015,第10期

机译：新型应变工程Ge-InGaAs异质结隧道场效应晶体管的性能评估
2. Investigation of performance enhancement in InAs/InGaAs heterojunction-enhanced N-channel tunneling field-effect transistor [J] . Genquan Han, Bin Zhao, Yan Liu, Superlattices and microstructures . 2015,第DECa期

机译：InAs / InGaAs异质结增强N沟道隧穿场效应晶体管性能增强的研究
3. InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 v [J] . Kim K.R., Yoon Y.J., Cho S., Current applied physics: the official journal of the Korean Physical Society . 2013,第9期

机译：InGaAs / InP异质结沟道隧穿场效应晶体管，用于低于0.5 v电源电压的超低工作和待机功率应用
4. Analysis of Radio Frequency Performance on GaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor which Applicable for Green Energy System Applications [C] . Yoon Young Jun, Seo Jae Hwa, Lee Hwan Gi, International Conference on Measuring Technology and Mechatronics Automation . 2014

机译：适用于绿色能源系统的GaAs / InGaAs异质结隧穿场效应晶体管的射频性能分析
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics [O] . Li-Fan Shen, SenPo Yip, Zai-xing Yang, -1

机译：具有溅射介电层的高性能包裹栅InGaAs纳米线场效应晶体管
7. Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length [O] . Tomioka, Katsuhiro, Fukui, Takashi 2014

机译：InGaAs纳米线/ Si异质结在隧道场效应晶体管中的电流增量

Analysis of Radio Frequency Performance on GaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor which Applicable for Green Energy System Applications

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