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Effect of process pressure on PVD AlN thin film

机译：工艺压力对PVD AlN薄膜的影响

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PVD AlN film deposition rate, within wafer stress uniformity, roughness and crystal orientation were studied on different process pressure. It was found that AlN deposition rate decreased with pressure increased. The decreasing rate dramatically increased when process pressure more than 12mT. Film stress tends to be more tensile with increased pressure at wafer edge and becomes more compressive when process pressure higher than 14mT. Within wafer film stress range can be reduced from ~600MPa to ~300Mpa when process pressure increased from 7mT to 14mT. Film becomes more rough with process pressure increased. Roughness RMS increased from 2.605~2.825nm to 3.131~3.692nm when pressure increased from 7mT to 14mT.
机译：研究了在不同工艺压力下，PVD AlN薄膜的沉积速率，晶片内应力均匀性，粗糙度和晶体取向。发现随着压力的增加，AlN的沉积速率降低。当过程压力超过12mT时，下降速率急剧增加。随着晶圆边缘压力的增加，膜应力趋向于具有更大的拉伸强度，而当工艺压力高于14mT时，膜应力将变得更具压缩性。当工艺压力从7mT增加到14mT时，在晶片薄膜内的应力范围可以从〜600MPa降低到〜300Mpa。随着工艺压力的增加，薄膜变得更加粗糙。当压力从7mT增加到14mT时，粗糙度RMS从2.605〜2.825nm增加到3.131〜3.692nm。

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