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MASK Patterns Correction for Advanced Device

机译:用于高级设备的掩模模式校正

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By generating supplementary patterns for EB data and using a system that corrects pattern line widths, we improved the shape (corner round) of a pattern formed on a photomask and the CD (critical dimension) - linearity. For the EB lithography system, trapezoidal and hammerhead supplementary patterns were applied in order to suppress the increase in EB data volume. As a result, it became possible to reduce the supplementary patterns generated to about 60percent of the existing serif supplementary patterns. The formed pattern shapes were also equivalent. Since the laser lithography system (ALTA3000) requires bigger correction pattern shapes than the EB lithography system (MEBES4500), triangle supplementary patterns were used. As a result, the corner round was improved with the number of patterns equivalent to that of existing rectangle supplementary patterns.
机译:通过为EB数据的补充模式和使用校正图案线宽的系统来产生补充模式,我们改进了在光掩模上形成的图案的形状(角圆)和CD(临界尺寸)线性度。对于EB光刻系统,应用梯形和锤头补充模式以抑制EB数据量的增加。结果,可以减少生成的补充模式,该补充模式为现有的Serif补充模式的约60%。形成的图案形状也等同。由于激光光刻系统(ALTA3000)需要比EB光刻系统(MEBES4500)更大的校正图案形状,因此使用三角形补充模式。结果,转角随着现有矩形补充模式的模式的数量得到改善。

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