Improvement of the resolution and accuracy of chemical-amplification positive resist for 0.13 mu m-reticle fabrication

机译：改善化学扩增抗蚀剂的分辨率和精度为0.13μm-kclicle制造

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We have developed a novolak-based chemical-amplification resist for 0.13- mu m or later reticle fabrication. For the 0.13- mu m or later design-rule reticle-fabrication with OPC patterns, the resist resolution is required under 0.2- mu m on the mask substrate. To improve the chemical-amplification resist resolution, it is necessary to control the acid-diffusion in the resist film. We have developed the technique of the acid-diffusion control with neutral-salt additives. By use of the resist ith this technique, we could fabricate 0.14- mu m 1/s patterns on a CrOx substrate at a dose of 9.3- mu C/cm~2 (50kV). The resist has a good margin of doses.

机译：我们开发了基于酚醛清漆的化学抗蚀剂，用于0.13 - MU M或更高版本的掩模版制造。对于0.13 - MU M或更高版本的设计规则 - 用OPC图案制造，在掩模基板上的0.2-μm下需要抗蚀剂分辨率。为了提高化学抗蚀剂分辨率，有必要控制抗蚀剂膜中的酸扩散。我们开发了中性盐添加剂的酸扩散控制技术。通过使用该技术的抗蚀剂，我们可以以9.3-mu C / cm〜2（50kV）的剂量在克鲁克底物上制造0.14-μm1/ s的图案。抗蚀剂具有良好的剂量余量。

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《Conference on photomask and next-generation lithography mask technology》|2000年||共9页
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Tadashi Arai; Toshio Sakamizu; Kei Kasuya; Kohji Katoh; Takashi Soga; Hidetaka Saitoh; Hiroshi Shiraishi; Morihisa Hoga; SPIE-The International Society for Optical Engineering;
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中图分类摄影机具与设备;
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novolak-based chemical-amplification resist; resist resolution acid-diffusion control; neutral-salt additives;

机译：基于酚醛清漆的化学抗蚀剂;抗蚀剂分辨率 - 扩散控制;中性 - 盐添加剂;

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专利

1. Fundamental Studies of Acid-Breakable Resins for Chemical-Amplification Positive Resist Matrices [J] . Tadashi Arai, Sonoko Migitaka, Toshio Sakamizu, Journal of Photopolymer Science and Technology . 2001,第4期

机译：用于化学放大正性抗蚀剂基质的耐酸树脂的基础研究
2. A 60 GHz Sub-Harmonic Resistive FET Mixer Using 0.13 $mu{rm m}$ CMOS Technology [J] . Lin S.-K., Kuo J.-L., Wang H. Microwave and Wireless Components Letters, IEEE . 2011,第10期

机译：采用0.13μm{rm m} $ CMOS技术的60 GHz次谐波电阻FET混频器
3. A 1.25 ps Resolution 8b Cyclic TDC in 0.13 $mu$m CMOS [J] . Seo Y.-H., Kim J.-S., Park H.-J., Solid-State Circuits, IEEE Journal of . 2012,第3期

机译：0.13μmCMOS中的1.25ps分辨率8b循环TDC
4. Improvement of the resolution and accuracy of chemical-amplification positive resist for 0.13 mu m-reticle fabrication [C] . Tadashi Arai, Toshio Sakamizu, Kei Kasuya, Conference on photomask and next-generation lithography mask technology . 2000

机译：用于0.13μm掩模版制造的化学放大正性光刻胶的分辨率和精度的提高
5. RESOLUTION AND QUANTITATIVE ACCURACY IMPROVEMENTS IN ULTRASOUND TRANSMISSION IMAGING (COMPUTED TOMOGRAPHY). [D] . CHENEVERT, THOMAS LEONARD. 1983

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Improvement of the resolution and accuracy of chemical-amplification positive resist for 0.13 mu m-reticle fabrication

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