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首页> 外文会议>Conference on photomask and next-generation lithography mask technology >Investigation of Fast and Accurate Reticle Defect Assessment Methods using STARlight~(TM) for Chrome-on-Glass Reticle defects
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Investigation of Fast and Accurate Reticle Defect Assessment Methods using STARlight~(TM) for Chrome-on-Glass Reticle defects

机译：使用星光〜（TM）对铬玻璃掩模帽缺陷的快速准确掩模型缺陷评估方法的研究

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Fast and accurate reticle defect assessment becomes increasingly important becausewafer critical dimensions continue to shrink and mask inspection equipment has moved into the UV range thereby increasing the number of detected reticle defects. dEfect size is not sufficient in determining if a defect prints or does not print and the threshold size for printing defects can vary broadly between 0.35 lambda /NA and 0.08 lambda /NA. At the low k_1 factors (<0.5) required to print current technology feautre sizes (0.18 mu m and below), correlation between reticel and wafer CDs ceases to be linear. The impact of reticle defects on CDs therefore, is more critical than for previous technologies and defect size, shape, and proximity to other features must be taken into consideration. Presented in this paper is an evaluation of different methods to determine the accuracy of imaging prediction for reticle defects, decreasing the time to results in a production environment by accelerating the decision process. These methods include printability based on aerial image (ff-line method) and the in-line STARlight~(TM) Contamination Printability Index (CPI).
机译：快速准确的掩模版缺陷评估变得越来越重要，因为威胁尺寸继续收缩，并且掩模检查设备已经进入UV范围，从而增加了检测到的掩模版缺陷的数量。在确定缺陷打印还是不打印的情况下，缺陷尺寸并不充分打印，并且打印缺陷的阈值尺寸可以在0.35λ/ na和0.08λ/ na之间变化。在低K_1因素（<0.5）时，需要打印电流技术的流量（0.18 mu m及以下），网状电池和晶片CD之间的相关性不再是线性的。因此，必须考虑到以前的技术和缺陷尺寸，形状和对其他特征的缺陷尺寸，形状和对其他特征的缺陷尺寸，形状和缺陷的影响。本文介绍是对不同方法的评估，以确定对掩模版缺陷的成像预测的准确性，降低通过加速决策过程导致生产环境的时间。这些方法包括基于航空图像（FF线法）和在线星光〜（TM）污染印刷性指数（CPI）的可印刷性。

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