Development of halftone phase-shift blank and mask fabrication for ArF lithography

机译：开发ARF光刻的半色调相移空白和掩模制造

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The halftone phase-shift mask (HtPSM) has been in practical use for i-line and KrF lithography. In ArF lithography, the HtPSM is also considered to be a promising resolution enhancement technique for its simple structure and fabrication process required. We in HOYA have attempted to expand the applicability of our MoSi-based HtPSM blank technology to ArF lithography, helping extend the life of the existing infrastructure for conventional HtPSM fabrication. We have completed tuning our new MoSi-based film for ArF application. The film's optical properties, chemical durability and ArF laser irradiation durability meet industry requirements; and it is compatible with conventional mask-making processes and repair techniques for the KrF HtPSM.

机译：半色调相移掩模（HTPSM）一直是I-Line和KRF光刻的实际用途。在ARF光刻中，HTPSM也被认为是其简单的结构和制造过程所需的分辨率增强技术。我们在霍卡试图扩大基于MOSI的HTPSM空白技术对ARF光刻的适用性，帮助延长现有基础设施的寿命，以实现传统的HTPSM制造。我们已完成调整我们的新MOSI的电影以进行ARF应用。薄膜的光学性能，化学耐用性和ARF激光照射耐用性满足行业要求;它与KRF HTPSM的传统掩模制作过程和修复技术兼容。

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《Conference on photomask and next-generation lithography mask technology》|2000年||共11页
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作者
Hideki Suda; Hideaki Mitsui; Osamu Nozawa; Hitoshi Ohtsuka; Megumi Takeuchi; Naoki Nishida; Yasushi Ohkubo; Masao Ushida; SPIE-The International Society for Optical Engineering;
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中图分类摄影机具与设备;
关键词
HtPSM; MoSi-based; ArF lithography; irradiation durability;

机译：HTPSM;基于MOSI;ARF光刻;辐照耐用性;

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1. Continuous phase-shift lithography with a roll-type mask and application to transparent conductor fabrication [J] . Kwak M.K., Ok J.G., Lee J.Y., Nanotechnology . 2012,第34期

机译：带有辊式掩模的连续相移光刻技术及其在透明导体制造中的应用
2. Optical simulation, optimized design and fabrication of (ZrO2)(x)-(Al2O3)(1-x) composite films with thin inserted TiO2 layers for ArF-line high transmission attenuated phase shift mask blank applications [J] . Lai FD Applied Surface Science . 2005,第4期

机译：用于ArF线高透射衰减相移掩模空白应用的（TiO2）（ZrO2）（x）-（Al2O3）（1-x）复合薄膜的光学模拟，优化设计和制造
3. Progress in the fabrication of low-defect density mask blanks for extreme ultraviolet lithography [J] . Rajul V. Randive, Andy Ma, Patrick A. Kearney, Journal of Microlithography, Microfabrication, and Microsystems. (JM3) . 2006,第2期

机译：低缺陷密度掩模板用于极端紫外光刻的制备进展
4. Development of MoSi-based halftone phase-shift blank and mask fabrication for ArF lithography [C] . Hideki Suda, Hideaki Mitsui, Osamu Nozawa, Annual BACUS symposium on photomask technology;BACUS symposium on photomask technology . 2001

机译：基于MoSi的半色调相移毛坯和ArF光刻掩模的开发
5. Mechanisms and development of etch resistance for highly aromatic monomolecular etch masks: Towards molecular lithography. [D] . Jarvholm, Erik Jonas. 2007

机译：高度芳族单分子蚀刻掩模的抗蚀刻性机理和发展：迈向分子光刻。
6. One-Step Mask-Based Diffraction Lithography for the Fabrication of 3D Suspended Structures [O] . Xianhua Tan, Tielin Shi, Jianbin Lin, 2018

机译：基于掩模的一步法光刻技术用于制造3D悬浮结构
7. Continuous phase-shift lithography with a roll-type mask and application to transparent conductor fabrication [O] . Moon Kyu Kwak, Jong G Ok, Jae Yong Lee, 2012

机译：连续相移光刻用辊式掩模和透明导体制造的应用
8. Infrared Frequency Selective Surfaces Fabricated using Optical Lithography and Phase-Shift Masks [R] . Spector, S. J., Astolfi, D. K., Doran, S. P., 2001

机译：使用光学光刻和相移掩模制造的红外频率选择表面

Development of halftone phase-shift blank and mask fabrication for ArF lithography

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