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Evaluation of printability and inspection of phase defects on hidden-shifter alternating phase-shift masks

机译:对混血仪交替相移掩模的阶段缺陷的可印刷性和检查的评价

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Inspection and repair of defects represent some of the challenges for the fabrication of "defect-free" alternating phase-shift masks needed for performnace improvements in patterning the polysilicon gate layer of integrated circuit devices. Inspection, metrology, repair, and printability of defects on dark-field alternating phase-shift masks used in dual exposure processes for polysilicon gate layer patterning are discussed in this study. The impact of phase and chrome defects on photoresist features printed at an exposure wavelength of 248 nm is evaluated and compared to the defect signals measured on a smask inspection tool operating at 364 nm. Experimental data on printability and inspection of programmed glass defects with several different phase errors as well as programmed chrome defects are compared to simulations. The effects of the exposure tool focus conditions on phase defect printability are discussed in detail. Phase defect contrast enhancement mechanisms that may enable improvements in phase defect detection durign mask inspection using conventional inspection tools are also addressed. Finally, successful repairs of real glass bump defects are demonstrated.
机译:缺陷的检验和修复代表了在图案化集成电路器件的多晶硅栅极层进行图案化的“无缺陷”交替相移相移掩模的一些挑战。本研究讨论了在多晶硅栅极层图案中用于双曝光过程的暗场交替相移掩模的检验,计量,修复和可印刷性。评估相位和铬缺陷对在248nm的曝光波长的光致抗蚀剂特征上的影响,并与在364nm的Smask检查工具上测量的缺陷信号进行比较。与仿真进行比较了关于具有几种不同相位误差的编程玻璃缺陷的可印刷性和检查的实验数据,以及编程的铬缺陷。详细讨论了曝光工具焦点条件对相位缺陷可印刷的影响。还寻址了可以实现使用传统检查工具实现相位缺陷检测持续的阶段缺陷检测持续防空掩模检查的相位缺陷对比度增强机制。最后,证明了真实玻璃凸块缺陷的成功修复。

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