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首页> 外文会议>Conference on photomask and next-generation lithography mask technology >Improved Method for Measuring and Assessing Reticle Pinhole Defects for the 100nm Lithography Node
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Improved Method for Measuring and Assessing Reticle Pinhole Defects for the 100nm Lithography Node

机译：用于测量和评估100nm光刻节点的掩模罩针孔缺陷的改进方法

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摘要

With the approach of the 100nm-lithography node, an accurate and reliable method of measuring reticle pinhole defects becomes necessary to assess the capabilities of high-end reticle inspection equipment. The current measurement method of programmed defect pinholes consists of using a SEM. While this method is repeatable, it does not reliably represent the true nature of a pinhole. Earlier studies have suggested that since the SEM images only a top down view of the pinhole, the measurement does not accurately account for edge wall angle and partial filling which both reduce pinhole transmission and subsequent printability. Since wafer lithography and reticle inspection tools use transmitted illumination, pinhole detection performance based on SEM measurements is often erroneous. In this study, a pinhole test reticle was manufactured to further characterize the capabilities of a transmission method to measure pinholes.
机译：利用100nm光刻节点的方法，需要准确可靠地测量掩模罩针孔缺陷的方法，以评估高端掩盖检测设备的能力。程序的缺陷针孔的当前测量方法包括使用SEM。虽然这种方法是可重复的，但它不能可靠地代表针孔的真实性质。早期的研究表明，由于SEM图像仅俯视针孔的俯视图，测量不准确地占边缘壁角和部分填充，这两种填充都会降低针孔传输和随后的可印刷性。由于晶圆光刻和掩模版检测工具使用传输的照明，基于SEM测量的针孔检测性能通常是错误的。在该研究中，制造针孔试验掩模版，以进一步表征传动方法测量针孔的能力。

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