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首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >ADVANCED LIGHT MANAGEMENT FOR THIN FILM SILICON SOLAR CELLS ON FOIL
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ADVANCED LIGHT MANAGEMENT FOR THIN FILM SILICON SOLAR CELLS ON FOIL

机译：薄膜硅薄膜太阳能电池的高级光管理

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We present different new concepts to improve the light trapping in thin film silicon solar cells on steel foil. One of these concepts is to incorporate a textured back reflector, where the light scattering texture is made by Nano-Imprint Lithography (NIL). In this concept, we imprint a texture in a UV-hardening lacquer that has been applied on the steel foil. This texture then is covered by a silver layer, serving as a reflector and a back contact. Any arbitrary texture can be imprinted, and we have shown in the past that by this method we can obtain short circuit current density (J_(sc)) of more than 24 mA/cm~2 for cells with a nanocrystalline silicon (nc-Si) absorber layer of only 1 micron. Here we present results showing that the concept can also be applied to fabricate thin film silicon solar cells on paper. Another approach is to replace this silver layer by a white back reflector (WBR). Since, in contrast to the utilization of a WBR in superstrate cells, in substrate-type n-i-p cells the WBR has to undergo all the different steps of the cell processing, there are strict requirements to the material of the WBR, in terms of degasing and temperature stability. We have identified suitable materials and applied these in amorphous silicon (a-Si) solar cells. The J_(sc) values of these cells were equal to those of cells with a NIL back reflector. Finally, we present a-Sic-Si tandem cells on foil in which we combine the NIL back reflector concept with an incorporated intermediate reflector (IR) based on n-type doped SiO_x.
机译：我们提出了不同的新概念，以改善钢箔上的薄膜硅太阳能电池中的光陷阱。这些概念之一是合并带纹理的后反射器，其中通过纳米压印光刻（NIL）制成光散射纹理。在这个概念中，我们将纹理压印在已应用于钢箔的UV硬化漆中。然后，该纹理被银层覆盖，该银层用作反射器和背面触点。可以压印任意纹理，过去我们已经表明，通过这种方法，对于具有纳米晶体硅（nc-Si）的电池，我们可以获得的短路电流密度（J_（sc））大于24 mA / cm〜2 ）仅1微米的吸收层。在这里，我们提供的结果表明该概念也可以应用于在纸上制造薄膜硅太阳能电池。另一种方法是用白背反射器（WBR）代替此银层。由于与在上层单元中使用WBR相反，在衬底型压区单元中，WBR必须经历单元处理的所有不同步骤，因此对WBR的材料在脱气和清洁方面有严格的要求。温度稳定性。我们已经确定了合适的材料，并将其应用于非晶硅（a-Si）太阳能电池中。这些单元的J_（sc）值等于具有NIL后向反射器的单元的J_（sc）值。最后，我们在箔上展示了a-Si / nc-Si串联电池，其中我们将NIL背反射器概念与基于n型掺杂SiO_x的内置中间反射器（IR）结合在一起。

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