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Thin Films of Silicon on Metallurgical Silicon Substrates-Phase II. Topical Report No. 3. Stability of Thin Film Polycrystalline Silicon Solar Cells

机译:冶金硅衬底上的硅薄膜 - 阶段II。专题报告第3号。薄膜多晶硅太阳能电池的稳定性

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Thin film polycrystalline silicon solar cells prepared by the deposition of a silicon film containing a p-n junction on a metallurgical silicon substrate appears to be promising for terrestrial applications. The characteristics of thin film silicon solar cells have been measured in the temperature range -40 exp 0 C to 100 exp 0 C, and their stabilities under thermal, humidity, and optical stress have been investigated. The stability of thin film silicon solar cells appears to be comparable to that of single crystalline silicon solar cells.

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