Atmospheric pressure chemical vapor deposition of silicon thin films using cyclohexasilane

机译：使用环己硅烷的大气压化学气相沉积硅薄膜

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We report the deposition of silicon thin films at high rates using atmospheric pressure chemical vapor deposition (AP-CVD) with cyclohexasilane (CHS), a liquid-hydrosilane. A precursor solution of CHS in cyclooctane was aerosolized and subsequently vaporized prior to contacting with the substrate. Using CHS, Si thin films were obtained at temperatures as low as 300 °C. A deposition rate of ∼50 nm/s was observed at 500 °C; while good-quality Si films were realized at 400 °C. Structural analysis of the films indicates a combination of amorphous and nano-crystalline Si phases, withe 2–3 orders of photoconductivity.

机译：我们报告使用大气压化学气相沉积（AP-CVD）和液态六氢硅烷环己硅烷（CHS）以高速率沉积硅薄膜。在与基材接触之前，先气化CHS在环辛烷中的前体溶液，然后蒸发。使用CHS，可在低至300°C的温度下获得Si薄膜。在500°C下观察到约50 nm / s的沉积速率;而在400°C时可获得高质量的Si膜。薄膜的结构分析表明，非晶态和纳米晶态的硅相结合在一起，具有2-3个数量级的光电导率。

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《IEEE Photovoltaic Specialists Conference》|2014年|3068-3070|共3页
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Guruvenket Srinivasan; Hoey Justin; Anderson Kenneth; Frohlich Matt; Strommen Gregory; Sailer Robert; Boudjouk Philip;
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Films; Head; Heating; Inductors; Silicon; Spectroscopy; Substrates; AP-CVD; Cyclohexasilane; Sithinfilms; high-rategrowth; high-throughputmanufacturingandsilicon; roll-to-rolldeposition;

机译：薄膜;头部;加热;电感器;硅;光谱学;基板; AP-CVD;环己硅烷;硅薄膜;高速率;高通量制造和硅;卷对卷沉积;

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1. Aerosol assisted atmospheric pressure chemical vapor deposition of silicon thin films using liquid cyclic hydrosilanes [J] . Guruvenket Srinivasan, Hoey JustinM., Anderson Kenneth J., Thin Solid Films . 2015,第auga31期

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2. Dependence of Solar Cell Performance on Electronic Properties at Grain Boundaries in Polycrystalline Silicon Thin Films Deposited by Atmospheric Pressure Chemical Vapor Deposition [J] . Tsutomu Yamazaki, Yoshiaki Matsumura, Yukiharu Uraoka, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第8A期

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3. Atmospheric-pressure plasma-enhanced chemical vapor deposition of electrochromic organonickel oxide thin films with an atmospheric pressure plasma jet [J] . Yung-Sen Lin, Di-Jiun Lin, Ping-Ju Sung, Thin Solid Films . 2013,第apra1期

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4. Atmospheric pressure chemical vapor deposition of silicon thin films using cyclohexasilane [C] . Guruvenket Srinivasan, Hoey Justin, Anderson Kenneth, IEEE Photovoltaic Specialists Conference . 2014

机译：使用环己硅烷的硅薄膜的大气压化学气相沉积
5. A SIMPLE METHOD FOR PREPARING HYDROGENATED AMORPHOUS SILICON FILMS BY CHEMICAL VAPOR DEPOSITION AT ATMOSPHERIC PRESSURE. [D] . ELLIS, FRANK BROWNING, JR. 1983

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8. Atmospheric Pressure Chemical Vapor Deposition and Jet Vapor Deposition of CdTe for High Efficiency Thin Film PV Devices [R] . Woods, L., Meyers, P. 2002

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Atmospheric pressure chemical vapor deposition of silicon thin films using cyclohexasilane

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