Stored charge properties of anodic aluminium oxide on silicon substrate

机译：阳极氧化铝在硅衬底上的存储电荷性质

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Anodic aluminium oxide (AAO) has been demonstrated to electronically passivate silicon surfaces, with one of the important contributors to the passivation being the electric field created by the stored charges in the AAO. This paper reports the stored charge properties of AAO calculated from MOS (Metal-Oxide-Semiconductor) capacitance-voltage (C-V) measurements and contactless corona C-V measurements. Results from both methods suggested that AAO stores a high density of positive charges, which are influenced by the properties of the intervening dielectric layers. Test structures were fired in an industrial belt furnace and the impact of firing on fixed charge density, interface state density and passivation were ascertained.

机译：阳极氧化铝（AAO）已被证明可以对硅表面进行电子钝化，钝化的重要因素之一是由AAO中存储的电荷产生的电场。本文报告了通过MOS（金属氧化物半导体）电容-电压（C-V）测量和非接触电晕C-V测量计算得出的AAO的存储电荷特性。两种方法的结果均表明，AAO存储高密度的正电荷，这受中间介电层特性的影响。在工业带式炉中烧制测试结构，并确定烧制对固定电荷密度，界面态密度和钝化的影响。

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《IEEE Photovoltaic Specialists Conference》|2014年|619-621|共3页
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Lu Zhong; Lu Pei Hsuan; Hameiri Ziv; Wang Kai; Cui Jie; Li Yang; Lennon Alison;
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Capacitance-voltagecharacteristics; Dielectricmeasurement; Dielectrics; Heattreatment; Passivation; Semiconductordevicemeasurement; Silicon; anodicaluminiumoxide; capacitance-voltagecharacterization; metal-oxide-semiconductor(MOS); passivation; photovoltaiccell; silicon; storedcharge;

机译：电容-电压特性;介电测量;介电;热处理;钝化;半导体器件测量;硅;阳极氧化铝;电容-电压表征;金属氧化物半导体（MOS）;钝化;光伏电池;硅;存储电荷;

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4. Stored charge properties of anodic aluminium oxide on silicon substrate [C] . Lu Zhong, Lu Pei Hsuan, Hameiri Ziv, IEEE Photovoltaic Specialists Conference . 2014

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Stored charge properties of anodic aluminium oxide on silicon substrate

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