GeSn waveguide photodetectors fabricated by rapid-melt-growth method

机译：快速熔融生长法制备的GeSn波导光电探测器

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A GeSn metal-semiconductor-metal (MSM) photodetector is fabricated on a silicon-on-insulator (SOI) waveguide by rapid melt growth method. The Sn concentration of the GeSn photodetector is 2 % and shows a larger photo-responsivity by comparing with a pure Ge photodetector at long wavelength. The dark current is 3.7e-7 A at 5.4 V and the operation speed can be as high as 6.2 GHz.

机译：通过快速熔体生长方法在绝缘体上硅（SOI）波导上制造了GeSn金属-半导体-金属（MSM）光电探测器。 GeSn光电探测器的Sn浓度为2％，与长波长的纯Ge光电探测器相比，具有更高的光响应性。 5.4 V时的暗电流为3.7e-7 A，工作速度可高达6.2 GHz。

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《International Symposium on Next-Generation Electronics》|2015年|1-4|共4页
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Chih-Kuo Tseng; Ching-Hsiang Chiu; Shih-Che Yen; Kuang-Chien Hsieh; Neil Na; Ming-Chang Lee;
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Germanium-tin photodetectors; Si waveguide detectors; metal-semiconductor-metal photodetectors;

机译：锗锡光电探测器;硅波导探测器;金属半导体金属探测器;

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专利

1. Sn-based waveguide p-i-n photodetector with strained GeSn/Ge multiple-quantum-well active layer [J] . Huang Yu-Hui, Chang Guo-En, Li Hui, Optics Letters . 2017,第9期

机译：基于SN的波导P-I-N光电探测器，具有应变GESN / GE多量子阱有源层
2. GeSn p-i-n waveguide photodetectors on silicon substrates [J] . Peng Yu-Hsiang, Cheng H.H., Mashanov Vladimir I., Applied Physics Letters . 2014,第23期

机译：硅基板上的GeSn p-i-n波导光电探测器
3. GeSn p-i-n waveguide photodetectors on silicon substrates [J] . Yu-Hsiang Peng, H. H. Cheng, Vladimir I. Mashanov, Applied Physics Letters . 2014,第23期

机译：硅基板上的GeSn p-i-n波导光电探测器
4. GeSn waveguide photodetectors fabricated by rapid-melt-growth method [C] . Chih-Kuo Tseng, Ching-Hsiang Chiu, Shih-Che Yen, International Symposium on Next-Generation Electronics . 2015

机译：通过快速熔融生长方法制造的GESN波导光电探测器
5. Nonlinear glass waveguide devices fabricated by femtosecond laser writing with thermal poling and waveguide modeling for silver ion exchange in glass. [D] . Li, Guangyu. 2006

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8. GeSn/Si Avalanche Photodetectors on Si substrates. [R] . Yu, S., Naseem, H. 2016

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GeSn waveguide photodetectors fabricated by rapid-melt-growth method

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