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Selenization of Cu2ZnSnSe4 thin films by rapid thermal processing

机译：快速热处理Cu 2 ZnSnSe 4 薄膜的硒化

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In this study showed that the single phases CZTSe were successfully synthesized without any other secondary phase existed. EDS measurement results showed that the Cu poor and Zn rich thin films. Subsequently, selenization the CZTSe precursor films were prepared by rapid thermal annealing (RTA). A few minutes of annealing at 550° are sufficient to produce crystalline CZTSe films with grain sizes in the micrometer range. We found that CZTSe nanoparticles for short reaction time 3hr, the mixture of various intermediate phase such as CuSe, ZnSe and Zn, Selenization obtained pure CZTSe phase and CZTSe thin films grain sizes about 1μm~2μm. Selenization the CZTSe reaction time for 3hr obtained single CZTSe phase. It can reduce the CZTSe thin films process and obtained uniform, great crystalline thin films.
机译：这项研究表明，成功合成了单相CZTSe，而没有任何其他次级相存在。 EDS测量结果表明，贫铜和富锌薄膜。随后，通过快速热退火（RTA）来硒化CZTSe前体膜。在550°退火几分钟足以生产出晶粒尺寸在微米范围内的CZTSe晶体薄膜。我们发现，CZTSe纳米粒子在短短3hr的反应时间内，CuSe，ZnSe和Zn等各种中间相的混合物，硒化得到了纯的CZTSe相，CZTSe薄膜的晶粒尺寸约为1μm〜2μm。硒化CZTSe反应时间3小时，得到单CZTSe相。它可以减少CZTSe薄膜的生产过程，从而获得均匀，结晶度高的薄膜。

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