首页> 外文会议>International Symposium on Next-Generation Electronics >Synthesis and selenization of Cu2SnSe3 nanocrystals by a novel solution method
【24h】

Synthesis and selenization of Cu2SnSe3 nanocrystals by a novel solution method

机译:新型溶液法合成Cu 2 SnSe 3 纳米晶及其硒化

获取原文

摘要

In this study, we firstly synthesized ternary CuSnSe nano ink by novel organic solvent polyetheramine by solvent-thermal reflux method. CuSnSe thin films were prepared by solvent-thermal reflux method for Cu/Sn ratio in three different ratios of 2/1, 1.8/1, and 1.4/1. Structure, surface morphology, composition, and electrical and optical properties at different process conditions were measured. SEM micrograph also shown that with Cu/Sn ratio increase, surface have many voids, not uniform for grain size and shape due to nonuniform grown second phase. In this experiment we display a nonvacuum based method to fabricate CuSnSe based device has been made to study copper factor on device performance. Furthermore, the selenization caused volume expansion of the film, and larger grains were consequently obtained in the CZTSe thin film. We proved that our method has great potential for further optoelectronic device due to low cost, high throughput and composition dependent properties.
机译:本研究首先采用溶剂-热回流法,用新型有机溶剂聚醚胺合成了三元CuSnSe纳米油墨。通过溶剂-热回流法以Cu / Sn比为2 / 1、1.8 / 1和1.4 / 1三种不同的比例制备CuSnSe薄膜。测量了在不同工艺条件下的结构,表面形态,组成以及电学和光学性能。 SEM显微照片还显示,随着Cu / Sn比的增加,由于第二相的不均匀生长,表面具有许多空隙,晶粒尺寸和形状不均匀。在本实验中,我们展示了一种基于非真空的方法来制造基于CuSnSe的器件,以研究铜对器件性能的影响。此外,硒化引起膜的体积膨胀,因此在CZTSe薄膜中获得较大的晶粒。我们证明了由于低成本,高通量和依赖成分的特性,我们的方法对于进一步的光电器件具有巨大的潜力。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号