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首页> 外文会议>IEEE International Conference on Nano/Micro Engineered and Molecular Systems >Discussion and analysis of Au/a-Si contact resistance in MEMS/NEMS devices
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Discussion and analysis of Au/a-Si contact resistance in MEMS/NEMS devices

机译：MEMS / NEMS器件中Au / a-Si接触电阻的讨论和分析

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摘要

In this work, reliable electric interconnection for MEMS/NEMS devices was realized by Au/a-Si (amorphous Si) and Au/c-Si (single-crystal Si) eutectic reaction in anodic wafer bonding process. We measured different resistances of different bonding areas under different bonding temperature. When bonding temperature is under 370 °C, the resistance of the different areas (from 200 μm to 1000 μm) fluctuate within a narrow range and more than 80 % of the resistance is less than 10 ohm. Compared with Au/c-Si contact, Au/a-Si contact is more reliable. When bonding temperature is above 370 °C, the resistance is related to the contact area and the discrete nature of the resistance is relatively large. According to statistics, more than 50 % of the resistance is above 100 ohm.
机译：在这项工作中，通过阳极晶片键合过程中的Au / a-Si（非晶硅）和Au / c-Si（单晶Si）共晶反应，实现了MEMS / NEMS器件的可靠电互连。我们在不同的粘合温度下测量了不同粘合区域的不同电阻。当键合温度低于370°C时，不同区域（200μm至1000μm）的电阻会在狭窄范围内波动，超过80％的电阻小于10 ohm。与Au / c-Si接触相比，Au / a-Si接触更加可靠。当键合温度高于370°C时，电阻与接触面积有关，并且电阻的离散特性相对较大。据统计，超过50％的电阻在100 ohm以上。

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