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首页> 外文会议>IEEE International Conference on Nano/Micro Engineered and Molecular Systems >Finite element simulation of stress relaxation process in living cells
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Finite element simulation of stress relaxation process in living cells

机译：活细胞应力松弛过程的有限元模拟

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In this manuscript, we investigated the fundamental mechanism of stress relaxation phenomenon by employing finite element simulation. Through finite element simulations, the evolution of stress distribution, deformation field and the interaction force was wholly recorded during both the loading and stress relaxation stages. With the developed simulation model, the sensitivity of force-time curves on cell height and substrate stiffness was thoroughly studied by changing the thickness of cell and Young's modulus of the substrate. The simulation results indicated that the variation of cell height leads to the significant change of F-t curve's magnitude but tiny deviation of the curve's shape. And the influence originates from the substrate can be totally eliminated with relatively hard substrate. Finally, using the viscoelastic parameters extracted from actual stress relaxation experiment, the dynamic mechanical behavior of L929 cells is simulated and investigated. A comparison between the experimental and simulation F-t curves demonstrated the effectiveness of the proposed finite element simulation approach.
机译：在本文中，我们通过有限元模拟研究了应力松弛现象的基本机理。通过有限元模拟，在加载和应力松弛阶段都完整记录了应力分布，变形场和相互作用力的变化。利用开发的仿真模型，通过改变单元的厚度和基板的杨氏模量，彻底研究了力-时间曲线对单元高度和基板刚度的敏感性。仿真结果表明，像元高度的变化导致F-t曲线幅值的显着变化，但曲线形状的微小偏差。并且，相对硬的基板可以完全消除源自基板的影响。最后，使用从实际应力松弛实验中提取的粘弹性参数，对L929细胞的动态力学行为进行了模拟和研究。实验和模拟F-t曲线之间的比较证明了所提出的有限元模拟方法的有效性。

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