Challenges in integrating embedded non volatile memory with floating poly and ONO in base line process

机译：在基线过程中将嵌入式非易失性存储器与浮动poly和ONO集成的挑战

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This paper discuss the challenges of the integration of non volatile memory array in base line CMOS technology. Process modules of Oxide-Nitride-Oxide (ONO) and floating poly are reviewed with specific examples. This integration work resulted in a successful production line with a path for additional integration of high power LDMOS devices with deep trench isolation (DTI).

机译：本文讨论了将非易失性存储器阵列集成到基线CMOS技术中所面临的挑战。通过具体示例对氧化物-氮化物-氧化物（ONO）和浮法多晶硅的工艺模块进行了综述。这项集成工作导致了一条成功的生产线，并为高功率LDMOS器件与深沟槽隔离（DTI）的进一步集成铺平了道路。

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《Annual SEMI Advanced Semiconductor Manufacturing Conference》|2015年|141-145|共5页
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Agam Moshe; Menon Santosh; Cosmin Peter; Yao Thierry; McGrath Peter; Ruiz Bladimiro; Baylis Brian; Ameele Eric; Rolofson Kirk; Young Roger;
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BARC; EEPROM; FLASH; Floating poly contact; ONO; ONO Fence; ONO etch; Poly stringers; Resist lifting; SCI clean;

机译：BARC; EEPROM; FLASH;浮动多触点; ONO; ONO栅栏; ONO蚀刻;纵梁;抗起重; SCI清洁;

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专利

1. A highly robust process integration with scaled ONO interpoly dielectrics for embedded nonvolatile memory applications [J] . Shum D.P., Hsing-Huang Tseng IEEE Transactions on Electron Devices . 1995,第7期

机译：高度稳定的工艺集成和可缩放的ONO互介电介质，适用于嵌入式非易失性存储器应用
2. Electrical bistabilities behaviour of all-solution-processed non-volatile memories based on graphene quantum dots embedded in graphene oxide layers [J] . Jaafar Muhammad Musoddiq, Ooi Poh Choon, Wee M. F. Mohd. Razip, Journal of materials science . 2019,第17期

机译：基于嵌入氧化石墨烯层中的石墨烯量子点的全溶液处理非易失性存储器的电双稳态行为
3. Type-II heterojunction organic/inorganic hybrid non-volatile memory based on FeS_2 nanocrystals embedded in poly(3-hexylthiophene) [J] . Lin C.W., Wang D.Y., Tai Y., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2011,第29期

机译：基于嵌入在聚（3-己基噻吩）中的FeS_2纳米晶体的II型异质结有机/无机混合非易失性存储器
4. Challenges in integrating embedded non volatile memory with floating poly and ONO in base line process [C] . Agam Moshe, Menon Santosh, Cosmin Peter, Annual SEMI Advanced Semiconductor Manufacturing Conference . 2015

机译：基于基线过程中浮动多功能和ONO集成嵌入式非易失性存储器的挑战
5. Integration of non-volatile memory with volatile memory for embedded memory architectures and signal processing applications [D] . Choi, David Suho 2008

机译：非易失性存储器与易失性存储器的集成，用于嵌入式存储器体系结构和信号处理应用
6. Volatility and Persistence of Value-Based Purchasing Adjustments: A Challenge to Integrating Population Health and Community Benefit Into Business Operations [O] . Jason S. Turner, Kevin D. Broom, Kenton J. Johnston, 2020

机译：基于价值的购买调整的波动和持续性：将人口健康和社区福利集成到业务运营中的挑战
7. ONO Ruptures Caused by ONO Implantation in a SONOS Non-Volatile Memory Device [O] . Sang-Yong Kim, Il-Soo Kim 2011

机译：在SONOS非易失性存储器件中的ONO植入引起的ono破裂
8. Novel Non-Volatile Memory Devices Based on Magnetic Semiconductor Nanostructures for Terabit Integration [R] . Kim, K. W. 2010

机译：基于磁性半导体纳米结构的新型非易失性存储器件用于太比特集成

Challenges in integrating embedded non volatile memory with floating poly and ONO in base line process

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