Effective wet clean method to eliminate unwanted growth SiGe defect in FinFET

机译：有效的湿法清洁方法可消除FinFET中有害的生长SiGe缺陷

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An effective wet clean method to remove unwanted growth SiGe defect in FinFET Junction sector was demonstrated in a single wafer clean toolset. The unwanted growth SiGe defect was known due to the tiny metallic particles (<;10nm) from chemical sources in pre SiGe growth clean step. The new wet clean method can remove tiny metallic particles efficiently and obtain better surface particles performance on FinFET production wafers.

机译：在单个晶片清洁工具集中证明了一种有效的湿法清洁方法，该方法可以消除FinFET结区域中不必要的生长SiGe缺陷。由于在SiGe生长前的清洁步骤中来自化学源的微小金属颗粒（<; 10nm），人们已经知道了有害的SiGe生长缺陷。新的湿法清洁方法可以有效去除微小的金属颗粒，并在FinFET生产晶圆上获得更好的表面颗粒性能。

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《Annual SEMI Advanced Semiconductor Manufacturing Conference》|2015年|152-154|共3页
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Jian Li; Prasad Jagdish; Byoung-Gi Min; Zhiguo Sun;
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FinFET; SiGe defect; elimination; metallic particles; unwanted growth; wet clean;

机译：FinFET; SiGe缺陷;消除;金属颗粒;有害生长;湿法清洁;

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4. Effective wet clean method to eliminate unwanted growth SiGe defect in FinFET [C] . Jian Li, Prasad Jagdish, Byoung-Gi Min, Annual SEMI Advanced Semiconductor Manufacturing Conference . 2015

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Effective wet clean method to eliminate unwanted growth SiGe defect in FinFET

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