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首页> 外文会议>Annual SEMI Advanced Semiconductor Manufacturing Conference >Eliminating arsenic containing residue that create killer defects in 20 nm HVM
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Eliminating arsenic containing residue that create killer defects in 20 nm HVM

机译：消除在20 nm HVM中产生致命缺陷的含砷残留物

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摘要

Dry oxide removal techniques are used as pre-spacer cleans to remove sidewall oxide (without undercutting the gate oxide and maintaining the gate CD (critical dimension)) in 20 nm HVM (high volume manufacturing). This results in arsenic containing residues on the wafer surface. Dry etch, although effective in accomplishing most of the desired process objectives, is not effective in removing arsenic, implanted into the oxide during the junction formation. As a result, arsenic residues are left on the wafer surface after the pre-spacer clean which then get coated by spacer nitride. Nitride-coated arsenic residues are difficult to remove and new cleans were developed to completely remove arsenic residue from the wafer surface at the pre-Spacer clean step. Defectivity reduction and electrical data are presented to show the effectiveness of these new cleans and the resultant yield increase, respectively.
机译：干氧化物去除技术被用作预间隔件清洁剂，以在20 nm HVM（大批量生产）中去除侧壁氧化物（不对栅极氧化物进行底切并保持栅极CD（临界尺寸））。这导致晶片表面上含有砷的残留物。干蚀刻虽然可以有效地实现大多数所需的工艺目标，但在去除结形成过程中注入氧化物中的砷方面却无济于事。结果，在预隔离器清洗之后，砷残留物残留在晶片表面，然后被隔离氮化物覆盖。氮化物涂层上的砷残留物很难去除，因此开发了新的清洗方法，可以在间隔器预清洗步骤中从晶片表面完全去除砷残留物。缺陷率的降低和电数据的显示分别表明了这些新清洗方法的有效性以及产量的增加。

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