• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Annual SEMI Advanced Semiconductor Manufacturing Conference >Integrated metrology's role in Gas Cluster Ion Beam etch
【24h】

Integrated metrology's role in Gas Cluster Ion Beam etch

机译：集成计量学在气体团簇离子束蚀刻中的作用

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Shrinking process windows for advanced processing of complex devices, sub-14nm, require advanced topography control. Within-wafer topography variations impact the uniformity of subsequent layers and can affect yield. Process tools can generally control global uniformity across wafer, but are not well equipped to fine-tune the local (reticle-to-reticle) topography. Advanced new process tools such as the Gas Cluster Ion Beam (GCIB) offer a promising path for improving topography within wafer and from wafer-to-wafer [1, 2]. GCIB uses a highly localized focus beam controlled by location specific processing (LSP) algorithms to achieve the needed planarization corrections. In order to be effective, the LSP algorithms require wafer-specific knowledge on the incoming topography distribution. The beam dwells in different locations on the wafer for different amounts of time in order to vary the amount of material removed. Therefore, the performance of local planarization tools depends on the availability and quality of the metrology data. Integrated scatterometry-based metrology (IM) is the workhorse metrology enabler for inline APC (Advanced Process Control) and monitoring solutions for the Chemical Mechanical Planarization (CMP) and Reactive Ion Etching (RIE) processes. While maintaining equivalent performance to their standalone (SA) scatterometry siblings, IMs are typically mounted on the GCIB tool and dedicated to provide pre and post-process measurements for wafers processed on the tool. They enable real-time per-wafer adjustments to within-lot process knobs due to their proximity to the process.
机译：缩小工艺窗口以对14nm以下的复杂设备进行高级处理需要先进的形貌控制。晶圆内部的形貌变化会影响后续层的均匀性，并可能影响成品率。工艺工具通常可以控制整个晶圆的整体均匀性，但装备不足，无法微调局部（标线到标线）的形貌。先进的新工艺工具，例如气体团簇离子束（GCIB），为改善晶片内部以及晶片与晶片之间的形貌提供了一条有希望的途径[1、2]。 GCIB使用由位置特定处理（LSP）算法控制的高度局部化的聚焦光束来实现所需的平面化校正。为了有效，LSP算法需要有关传入拓扑分布的特定于晶圆的知识。光束在晶片上的不同位置停留不同的时间，以改变去除的材料量。因此，本地平面化工具的性能取决于度量数据的可用性和质量。集成的基于散射测量的度量（IM）是用于在线APC（高级过程控制）和化学机械平坦化（CMP）和反应性离子蚀刻（RIE）过程的监视解决方案的主要工具。 IM在保持与独立（SA）散射测量同级产品同等的性能的同时，通常将其安装在GCIB工具上，并专门为在该工具上处理的晶圆提供预处理和后处理测量。由于它们与制程的接近性，它们可以对批内制程旋钮进行实时的每个晶片调整。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号