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Post TSV etch cleaning process development using SAPS megasonic technology

机译：使用SAPS megasonic技术开发TSV后蚀刻清洗工艺

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In this paper, the method of space alternated phase shift (SAPS) megasonic technology is applied for post-etch (Bosch) TSV wafers cleaning process. The SAPS technology provides uniform sonic energy on each point of entire wafer by alternating phase of megasonic wave in the gap between a megasonic device and the wafer. For this study, 5×50 μm post-etch (Bosch) TSV wafers were used. Experimental verification is provided using both physical analysis and electrical test. SEM equipped with an EDX was used to detect the presence of fluoropolymer residue (i.e., CXFY) for pre- and post-cleaning TSV coupons, FIB-SEM was used to evaluate copper plating performance; TSV leakage current map and Voltage ramp dielectric breakdown (VRDB), which act as principal electrical reliability metric, were also used to assess cleans effectiveness. The test results indicate that the megasonic energy can propagate to the bottom of TSV, and the wafers undergo SAPS cleaning process exhibit obvious electrical performance enhancement comparing with those cleaned by conventional single-wafer spray approach.
机译：本文将空间交替相移（SAPS）超声技术应用于后蚀刻（Bosch）TSV晶片清洗工艺。 SAPS技术通过在超音速设备和晶圆之间的间隙中交替交替的超音波相位，在整个晶圆的每个点上提供均匀的声能。在本研究中，使用了5×50μm的蚀刻后（Bosch）TSV晶片。使用物理分析和电气测试均提供了实验验证。配备EDX的SEM用于检测清洗TSV试块前后的含氟聚合物残留物（即CXFY），FIB-SEM用来评估镀铜性能; TSV泄漏电流图和电压斜坡电介质击穿（VRDB）作为主要的电气可靠性指标，也用于评估清洁效果。测试结果表明，超音速能量可以传播到TSV的底部，与传统的单晶圆喷涂方法相比，经过SAPS清洗工艺的晶圆表现出明显的电性能增强。

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