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Rapid non-destructive detection of sub-surface Cu in silicon-on-insulator wafers by optical second harmonic generation

机译:光学二次谐波的快速无损检测绝缘体上硅晶片中的表面铜

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Time dependent second harmonic optical signals were measured across silicon-on-insulator (SOI) wafer coupons contaminated by Cu-63 ion implanted into the buried oxide (BOX) and near the SOI/BOX and BOX/Bulk interfaces. Average signals after 1 second of exposure for all spatial points were compared between wafers and used to differentiate contamination levels post ion-implantation.
机译:在绝缘体上硅(SOI)晶片试样上测量随时间变化的二次谐波光信号,该试样被注入到埋入氧化物(BOX)中且靠近SOI / BOX和BOX / Bulk界面的Cu-63离子污染。在晶片之间比较了所有空间点在曝光1秒后的平均信号,并用于区分离子注入后的污染水平。

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