• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Annual SEMI Advanced Semiconductor Manufacturing Conference >Validation of High Efficiency ICP Source performance for advanced resist ashing
【24h】

Validation of High Efficiency ICP Source performance for advanced resist ashing

机译：验证用于高级抗蚀剂灰化的高效ICP源性能

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

High Efficiency plasma Source (HES) was proposed before for use in a dry strip process [1]. Some extremely high ash rate significantly exceeding 10um/min from reference blanket photoresist wafer has been achieved. HES performance with different process chemistries, reliability of the source and repeatability of results was validated under many conditions, including extreme ones, such as cycling very long processes at high power (5kW). Repeatable process results with reliable hardware performance were obtained from the tool equipped with HES plasma source in a regular 300mm configuration. In this paper we report some of these results as well as some data from 450mm C&F process chamber.
机译：以前提出将高效等离子体源（HES）用于干法剥离工艺[1]。从参考毯式光致抗蚀剂晶片获得了一些非常高的灰分速率，其显着超过10um / min。在许多条件下，包括在极端条件下，例如在高功率（5kW）下循环很长的过程时，都可以验证具有不同过程化学的HES性能，来源的可靠性和结果的可重复性。可从配备300毫米常规配置HES等离子体源的工具获得具有可靠硬件性能的可重复过程结果。在本文中，我们报告了其中一些结果以及450mm C＆F处理室的一些数据。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号