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Fabrication and characterization of ITO thin film resistance temperature detector

机译:ITO薄膜电阻温度检测仪的制作与表征

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Indium-tin-oxide (ITO) thin film resistance temperature detectors (RTD) were fabricated on alumina substrates by RF sputtering in this study. The scanning electron microscope (SEM) images show that the thin film was smooth and dense. The ICP test shows that the ITO has an In2O3/SnO2 weight ratio of 9.76. ITO film was an In2O3 crystal structure with a preferred orientation of (440) for the as-deposited film and showed a preferred orientation of (222) after annealing at 850°C. High temperature tests revealed that the RTD had a negative temperature coefficient of resistance (TCR) of -2313 ppm°C-1 from room temperature to 400°C and a positive TCR of 3552 ppm°C-1 at the temperature of 400-600°C. While at the range of 600-900°C the TCR turned to be -2152 ppm°C-1.
机译:在本研究中,通过射频溅射在氧化铝基板上制备了氧化铟锡(ITO)薄膜电阻温度检测器(RTD)。扫描电子显微镜(SEM)图像显示该薄膜是光滑且致密的。 ICP测试表明,ITO的In2O3 / SnO2重量比为9.76。 ITO膜为In 2 O 3晶体结构,对于沉积的膜而言优选取向为(440),并且在850℃下退火后显示优选取向为(222)。高温测试显示,从室温到400°C,RTD的负电阻温度系数(TCR)为-2313 ppm°C-1,在温度为400-600时,RTR的正TCR为3552 ppm°C-1 ℃。在600-900°C范围内,TCR变为-2152 ppm°C-1。

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