Improvement of Vertical Diode Properties by N-type Plasma Doping for Low-Power Phase Change Non-Volatile Memory (NVM)

机译：N型等离子体掺杂的垂直二极管特性改善低功率相位变化非易失性存储器（NVM）

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Using PH_(3) N-type plasma doing (PLAD), the device characteristics of high performance vertical switch diode for 50nm phase-change NVM have been studied. Compared to the conventional beam line ion implantation, there are improvements of diode breakdown voltage (B.V.) and isolation B.V., respectively 20percent and 41percent by N-type PLAD doping due to the higher doping level and shallower profile in N+ region. It also shows excellent off-leakage properties less than 10pA/cell without decreasing the Ion. From the results of this study, N-type PLAD has been demonstrated to be effective for vertical diode electrical properties as well as for high productivity.

机译：使用PH_（3）N型等离子体进行（PLAD），研究了50nm相变NVM的高性能垂直开关二极管的器件特性。与传统的光束线离子注入相比，由于较高的掺杂水平和较浅的曲线在N +区域中，分别由二极管击穿电压（B.V.）和隔离B.V的分离和41分别进行了改善。它还显示出优异的漏泄漏性能小于10pa /电池而不降低离子。从本研究的结果，已经证明了N型PLAD为垂直二极管电性能以及高生产率有效。

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《International Conference on Ion Implantation Technology》|2011年||共3页
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Min Yong Lee; H. S. Lee; Y. J. Ki; Y. S. Sohn; H. S. Kang; C. Y. Oh; J. W. Park; S. H. Jo;
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中图分类计算技术、计算机技术;
关键词
N-type Plasma Doping; Diode; Phase change Memory;

机译：n型等离子体掺杂;二极管;相变内存;

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专利

1. Reactive-ion etching of Sn-doped Ge_2Sb_2Te_5 in CHF_3/O_2 plasma for non-volatile phase-change memory device [J] . Cheng Xu, Bo Liu, Zhitang Song, Thin Solid Films . 2008,第21期

机译：非易失性相变存储器件中CHF_3 / O_2等离子体中Sn掺杂Ge_2Sb_2Te_5的反应离子刻蚀
2. Improvement of electrical properties of the Ge2Sb2Te5 film by doping Si for phase-change random access memory [J] . Qiao BW, Feng J, Lai YF, Chinese physics letters . 2006,第1期

机译：通过掺杂Si用于相变随机存取存储器来改善Ge2Sb2Te5薄膜的电性能
3. Improvement of Electrical Properties of the Ge2Sb2Te5 Film by Doping Si for Phase-Change Random Access Memory [J] . QIAO Bao-Wei, FENG Jie, LAI Yun-Feng, 中国物理快报：英文版 . 2006,第001期

机译：通过掺杂硅用于相变随机存取存储器来改善Ge2Sb2Te5薄膜的电性能
4. Improvement of Vertical Diode Properties by N-type Plasma Doping for Low-Power Phase Change Non-Volatile Memory (NVM) [C] . Min Yong Lee, H. S. Lee, Y. J. Ki, International Conference on Ion Implantation Technology . 2011

机译：N型等离子体掺杂的垂直二极管特性改善低功率相位变化非易失性存储器（NVM）
5. Study of the Crystallization Dynamics and Threshold Voltage of Phase Change Materials for Use in Reconfigurable RF Switches and Non-volatile Memories. [D] . Xu, Min. 2017

机译：用于可重构RF开关和非易失性存储器的相变材料的结晶动力学和阈值电压的研究。
6. Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection [O] . Souvik Kundu, Michael Clavel, Pranab Biswas, -1

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7. Non-volatile memory (NVM) technologies [O] . Shao Z, Chang YH 2016

机译：非易失性存储器（NVM）技术

Improvement of Vertical Diode Properties by N-type Plasma Doping for Low-Power Phase Change Non-Volatile Memory (NVM)

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