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Preparation of SiO_2 Nanowires by Using Carbon as Reducing Agent

机译:使用碳作为还原剂制备SiO_2纳米线

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SiO_2 nanowires structures have been grown by a simple thermal evaporation method using C and SiO_2 as the source materials at a relatively low. The as-synthesized products were characterized by scanning electron microscopy, electron energy-dispersive X-ray (EDX), X-ray powder diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). The products characterization indicated that the SiO_2 nanowires with diameters ranging from 60nm to 120nm with a hexagonal strcture, with the length up to a few centimeters. The photoluminescence spectra of the grown products indicate excellent optical properties for the as-grown SiO_2 nanowires.
机译:SiO_2纳米线结构已经通过使用C和SiO_2的简单的热蒸发方法来增长,作为相对较低的源材料。通过扫描电子显微镜,电子能量分散X射线(EDX),X射线粉末衍射(XRD),拉曼光谱(RS)和光致发光(PL),表征了AS合成的产品。产品表征表明,具有直径的SiO_2纳米线从60nm到120nm,六角形旋转,长度高达几厘米。生长产物的光致发光光谱表示为生长的SiO_2纳米线表示优异的光学性质。

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