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Reactance-less RM relaxation oscillator using exponential memristor model

机译：使用指数忆阻器模型的无电抗RM弛豫振荡器

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Recently, the memristor based relaxation oscillators become an important topic in circuit theory where the reactive elements are replaced by memristor which occupies a very small area. In this paper, a design of memristor-based relaxation oscillator is introduced based on exponential memristor model. Unlike previously published oscillators which were built based on a simple memristor model, the exponential model is used, as a generalized model, to verify the concept of memristor based RM oscillator using a model that has electrical characteristic very close to the fabricated device. First, the effect of changing parameters of the memristor is illustrated using graphical analysis. Then, a reasonable range of values for the device parameters are selected to be suitable for the operation of the RM oscillator. The mathematical modeling of the memristor in the oscillator is introduced, in addition to the effect of changing the control voltage on the oscillation frequency. The design and simulations were carried out using Cadence Virtuoso.
机译：近来，基于忆阻器的张弛振荡器成为电路理论中的重要课题，其中电抗元件被占面积很小的忆阻器代替。本文基于指数忆阻器模型，介绍了基于忆阻器的张弛振荡器的设计。与以前发布的基于简单忆阻器模型构建的振荡器不同，使用指数模型作为广义模型，使用具有非常接近于所制造器件的电气特性的模型来验证基于忆阻器的RM振荡器的概念。首先，使用图形分析说明了改变忆阻器参数的效果。然后，为设备参数选择一个合理的值范围，以适合RM振荡器的操作。除了改变控制电压对振荡频率的影响之外，还介绍了振荡器中忆阻器的数学模型。设计和仿真是使用Cadence Virtuoso进行的。

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