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A study on double via row configuration for SIW based structures

机译：基于SIW的结构的双通行配置研究

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This paper studies a practical configuration to enhance SIW based structures. The proposed structure is achieved by applying double via rows with staggered configuration instead of single via rows presented in conventional SIW structures. This paper presents a study to use a certain configuration by applying the same number of vias with a staggered configuration to provide an enhanced losses and a relaxed dielectric field for relatively high power applications. To verify the proposed idea, six prototypes operating at the X-band were fabricated and measured. The proposed configuration achieves 43.52% enhancement in insertion loss and 66.15% wider bandwidth when compared to conventional SIW structures utilizing single via rows using the same number of drilled vias. Measurements are in good agreement with simulations and calculations which verify the design approach as well as the paper outcomes.
机译：本文研究了一种实用的配置，以增强基于SIW的结构。通过应用具有交错配置的双过孔行而不是传统SIW结构中出现的单过孔行来实现所提出的结构。本文提出了一项研究，以通过使用相同数量的具有交错配置的过孔来使用特定配置，以为相对较高功率的应用提供增强的损耗和松弛的介电场。为了验证所提出的想法，制造并测量了在X波段工作的六个原型。与使用相同数量的通孔的单通孔行的常规SIW结构相比，所提出的配置可实现43.52％的插入损耗增强和66.5％的较宽带宽。测量结果与模拟和计算结果吻合，可以验证设计方法以及论文结果。

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