Overpals, Underlaps, and Underpals

机译：上朋友，下朋友和下朋友

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摘要

An overlap in a word is a factor of the form axaxa, where x is a (possibly empty) word and a is a single letter; these have been well-studied since Thue's landmark paper of 1906. In this note we consider three new variations on this well-known definition and some consequences.

机译：单词中的重叠是axaxa形式的因子，其中x是一个（可能是空的）单词，而a是单个字母;自从Thue在1906年发表具有里程碑意义的论文以来，对它们进行了充分的研究。在本注释中，我们考虑了这个众所周知的定义的三个新变体以及一些后果。

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《International conference on combinatorics words》|2017年|17-29|共13页
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Aayush Rajasekaran; Narad Rampersad; Jeffrey Shallit;
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关键词
Overlap; Automata; Avoidability in words;

机译：交叠;自动机文字可回避性;

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专利

1. Investigation of asymmetric effects due to gate misalignment, gate bias and underlap length in III-V heterostructure underlap DG MOSFET [J] . Hemant Pardeshi, Sudhansu Kumar Pati, Godwin Raj, Physica, E. Low-dimensional systems & nanostructures . 2012,第3期

机译：研究III-V型异质结构下叠式DG MOSFET中由于栅极未对准，栅极偏置和下叠长度引起的不对称效应
2. Effect of underlap and gate length on device performance of an AlInN/GaN underlap MOSFET [J] . Pardeshi H., Pati S.K., Raj G., Journal of Semiconductors . 2012,第12期

机译：下重叠和栅极长度对AlInN / GaN下重叠MOSFET器件性能的影响
3. Numerical assessment of high-k spacer on symmetric S/D underlap GAA junctionless accumulation mode silicon nanowire MOSFET for RFIC design [J] . Neha Gupta, Ajay Kumar Applied Physics . 2021,第1期

机译：用于对称S / D下划线GAA结累积型硅纳米线MOSFET的高k间隔物的数值评估
4. Overpals, Underlaps, and Underpals [C] . Aayush Rajasekaran, Narad Rampersad, Jeffrey Shallit International Conference on Combinatorics on Words . 2017

机译：过度，下划线和大楼
5. Asymmetric underlap optimization of sub-10nm finfets for realizing energy-efficient logic and robust memories. [D] . Akkala, Arun Goud. 2016

机译：10纳米以下鳍片的不对称重叠优化，可实现节能逻辑和强大的存储器。
6. Asymmetric Drain Extension Dual-kk Trigate Underlap FinFET Based on RF/Analog Circuit [O] . Ke Han, Guohui Qiao, Zhongliang Deng, 2017

机译：基于射频/模拟电路的非对称漏极扩展Dual-kk Trigate叠底FinFET
7. Reducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap [O] . Abinaya Krishnaraja, Johannes Svensson, Erik Lind, 2019

机译：使用栅极 - 漏极潜水潜水局部减少III-V垂直纳米线隧道FET中的Ampolar断开状态漏电流
8. Evaluation of Harvey Aluminum 1- by 12-Ft Extruded Light-Duty Landing Mat with Overlap/Underlap End Connectors. [R] . Green, H. L., McCormick, C. T. 1971

机译：评估Harvey铝合金1乘12 Ft挤压轻型着陆垫，带重叠/重叠端连接器。

Overpals, Underlaps, and Underpals

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