Switchable Lamb wave delay lines using AlGaN/GaN heterostructure

机译：使用AlGaN / GaN异质结构的可切换Lamb波延迟线

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This paper reports on the first demonstration of GaN-based switchable Lamb wave delay lines with >40 dB ON/OFF ratio at several gigahertz frequency range. The high-density two-dimensional electron gas (2DEG) at the interface of AlGaN/GaN heterostructure is used to screen out the lateral electric field and switch off the piezoelectric transducer. By properly selecting the thickness-to -wavelength ratio, the proposed Lamb wave delay line only exhibits zero-order symmetric (S0) and anti-symmetric (A0) Lamb wave mode responses, while providing significant spurious mode reduction up to 26.5 GHz. The Lamb wave delay lines show superior performance in terms of insertion loss and out-of-band rejection over conventional surface acoustic wave (SAW) devices and also achieve a good linearity.

机译：本文报道了在几个千兆赫频率范围内具有> 40 dB ON / OFF比的GaN基可开关Lamb波延迟线的首次演示。 AlGaN / GaN异质结构界面处的高密度二维电子气（2DEG）用于屏蔽横向电场并关闭压电换能器。通过适当地选择厚度对1/4波长的比率，所提出的兰姆波延迟线仅表现出零阶对称（S0）和反对称（A0）Lamb波模式的响应，同时提供了杂散显著模降低至26.5千兆赫。兰姆波延迟线在插入损耗和带外抑制方面表现出优于常规表面声波（SAW）的性能，并且还具有良好的线性度。

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《International Conference on Solid-State Sensors, Actuators and Microsystems》|2017年|179-182|共4页
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Haoshen Zhu; Mina Rais-Zadeh;
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Delay lines; Switches; HEMTs; MODFETs; Radio frequency; Gallium nitride; Aluminum gallium nitride;

机译：延迟线;开关; HEMT; MODFET;射频;氮化镓;氮化铝镓;

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1. Electromagnetic Modeling, Technology, and Production of Microwave C 3MOSHFET Switches on AlGaN/GaN Heterostructures [J] . A. S. Adonin, A. Yu. Evgrafov, V. M. Minnebaev, Russian Microelectronics . 2017,第6期

机译：微波炉电磁建模，技术和生产的微波C <上标> 3 AlGaN / GaN异质结构上的开关
2. Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors [J] . 杨铭, 林兆军, 赵景涛, 中国物理：英文版 . 2015,第011期

机译：通过AlGaN / AlN / GaN异质结构场效应晶体管中的衬底偏置来改善开关特性
3. New Inductively Coupled Plasma-Chemical Vapor Deposition SiO_2 Passivation for High-Voltage Switching AlGaN/GaN Heterostructure Field-Effect Transistors [J] . Min-Woo Ha, Seung-Chul Lee, Jin-Cherl Her, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第4B期

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4. Switchable Lamb wave delay lines using AlGaN/GaN heterostructure [C] . Haoshen Zhu, Mina Rais-Zadeh International Conference on Solid-State Sensors, Actuators and Microsyste-ms . 2017

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7. Low Flicker-Noise GaN/AlGaN Heterostructure Field-Effect Transistors for Microwave Communications [O] . Balandin Morozov Cai, A. Bal, S. V. Morozov, 2007

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8. Epitaxial Growths of m-Plane AlGaN/GaN and AlInN/GaN Heterostructures Applicable for Normally-Off Mode High Power Field Effect Transistors on Freestanding GaN Substrates [R] . Chichibu, S., Hazu, K. 2011

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Switchable Lamb wave delay lines using AlGaN/GaN heterostructure

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