Semiconductor Substrate Having AlGaN/GaN Heterostructure and Heterostructure Field Effect Transistor

• 1. 一种具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管 [P] . 中国专利： CN107017293A . 2017-08-04
• 2. 一种具有部分P型GaN帽层的AlGaN/GaN异质结场效应晶体管 [P] . 中国专利： CN106783961A . 2017-05-31
• 3. SEMICONDUCTOR SUBSTRATE HAVING ALGAN/GAN HETEROSTRUCTURE AND HETEROSTRUCTURE FIELD EFFECT TRANSISTOR [P] . 韩国专利： KR20100089464A . 2010-08-12

  机译： 具有Algan / GAN异质结构和异质结构场效应晶体管的半导体基质

• 4. ALGAN/GAN HETEROSTRUCTURE FIELD EFFECT TRANSISTOR WITH NIO AS A GATE INSULATOR [P] . 韩国专利： KR20050099395A . 2005-10-13

  机译： 用NIO作为栅极绝缘体的ALGAN / GAN异质结构场效应晶体管

• 5. Multi-finger large periphery AlInN/AlN/GaN metal-oxide-semiconductor heterostructure field effect transistors on sapphire substrate [P] . 美国专利： US9543425B2 . 2017-01-10

  机译： 蓝宝石衬底上的多指大外围AlInN / AlN / GaN金属氧化物半导体异质结构场效应晶体管

• 1. ANALYTICAL RESEARCH ON THE STATIC CHARACTERISTICS OF HETEROSTRUCTURE ISOLATED GATE FIELD-EFFECT TRANSISTORS [J] . 王德宁, 顾聪, 王尉源 电子科学学刊：英文版 . 1992,第002期
• 2. Electronic and Shallow Impurity States in Semiconductor Heterostructures Under an Applied Electric Field [J] . ZHOU Hai-Yang, GU Shi-Wei, SHI Yao-Ming 理论物理通讯（英文版） . 2005,第008期
• 3. Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates [J] . Yu-Lin Hsiao, Chia-Ao Chang, Edward Yi Chang, _Applied Physics Express . 2014,第5期
• 4. High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO_2 Layer [J] . Chun-Kai WANG, Shoou-Jinn CHANG, Yan-Kuin SU, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2005,第4B期
• 5. Electrical Characteristics of AlGaN/GaN Metal-Insulator Semiconductor Heterostructure Field-Effect Transistors on Sapphire Substrates [J] . W.S. Tan, P.A. Houston, G. Hill, Journal of Electronic Materials . 2003,第5期
• 6. We report on the novel normally-off GaN-based heterojunction field effect transistors (HFETs) on a Si substrate.The AlGaN/AIN/GaN heterostructure was grown using a metalorganic chemical vapor deposition (MOCVD).The HFET for a normally-off operation w [C] . M.Germain, M.Leys, J.Derluyn, Symposium on GaN, AIN, InN and Their Alloys . 2005
• 7. Process development and characterization of AlGaN/GaN heterostructure field-effect transistors [D] . Ping, Andrew Taiann 1999
• 8. Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors [O] . Dongmin Keum, Hyungtak Kim 2019
• 9. LOW-FREQUENCY NOISE IN AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS AND METAL OXIDE SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTORS [O] . S. L. Rumyantsev, N. Pala, M. S. Shur, 2015
• 10. Epitaxial Growths of m-Plane AlGaN/GaN and AlInN/GaN Heterostructures Applicable for Normally-Off Mode High Power Field Effect Transistors on Freestanding GaN Substrates [R] . Chichibu, S., Hazu, K. 2011

• 1. Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess [J] . Wen Shi ,Sen Huang ,Xinhua Wang . 半导体学报:英文版 . 2021,第9期
• 2. Analysis of the abnormal resistance in AlGaN/GaN heterostructure's ohmic contact tests [J] . XU Chuan WANG Jinyan JIN Haiyan ZHOU Jin WEN Cheng P . 稀有金属：英文版 . 2007,第5期
• 3. High-performance junction field-effect transistor based on black phosphorus/β-Ga2O3 heterostructure [J] . Chang Li ,Cheng Chen ,Jie Chen . 半导体学报：英文版 . 2020,第8期
• 4. BST/AlGaN/GaN铁电/半导体异质结构二维电子气研究 [C] . 孔月婵 ,薛舫时 ,周建军 . 第十五届全国化合物半导体材料、微波器件和光电器件学术会议 . 2008
• 5. AlGaN/GaN/AlGaN/GaN双异质结场效应晶体管中极化库仑场散射机制研究 [A] . 郝笑寒 . 2018