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Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

机译：质子辐照对常断型AlGaN / GaN栅嵌入式金属-绝缘体-半导体异质结构场效应晶体管随时间变化的介电击穿特性的影响

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In this work, we investigated the time-dependent dielectric breakdown (TDDB) characteristics of normally-off AlGaN/GaN gate-recessed metal–insulator–semiconductor (MIS) heterostructure field effect transistors (HFETs) submitted to proton irradiation. TDDB characteristics of normally-off AlGaN/GaN gate-recessed MISHFETs exhibited a gate voltage ( ) dependence as expected and showed negligible degradation even after proton irradiation. However, a capture emission time (CET) map and cathodoluminescence (CL) measurements revealed that the MIS structure was degraded with increasing trap states. A technology computer aided design (TCAD) simulation indicated the decrease of the vertical field beneath the gate due to the increase of the trap concentration. Negligible degradation of TDDB can be attributed to this mitigation of the vertical field by proton irradiation.

机译：在这项工作中，我们研究了质子辐照下常关断的AlGaN / GaN栅极嵌入式金属-绝缘体-半导体（MIS）异质结构场效应晶体管（HFET）随时间变化的介电击穿（TDDB）特性。常关型AlGaN / GaN栅极凹入式MISHFET的TDDB特性表现出预期的栅极电压（）依赖性，即使在质子辐照后，其退化也可以忽略不计。但是，捕获发射时间（CET）图和阴极发光（CL）测量表明，MIS结构随着陷阱态的增加而降低。技术计算机辅助设计（TCAD）模拟表明，由于陷阱浓度的增加，栅极下方的垂直场减小了。 TDDB的可忽略的降解可归因于质子辐照对垂直场的缓解。

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期刊名称 Micromachines
作者
Dongmin Keum; Hyungtak Kim;
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年(卷),期 2019(10),11
年度 2019
页码 -1
总页数 8
原文格式 PDF
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关键词
AlGaN/GaN; proton irradiation; time-dependent dielectric breakdown (TDDB); reliability; normally off;

机译：AlGaN / GaN;质子辐照;时变介质击穿（TDDB）;可靠性;常关;

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1. Effects of Traps Formed by Threading Dislocations on Off-State Breakdown Characteristics in GaN Buffer Layer in AlGaN/GaN Heterostructure Field-Effect Transistors [J] . Akihiro Hinoki, Junjiroh Kikawa, Tomoyuki Yamada, Applied physics express . 2008,第1期

机译：线错位形成的陷阱对AlGaN / GaN异质结构场效应晶体管中GaN缓冲层中态关闭特性的影响
2. Effects of Recess Depth Under the Gate Area on the V-th-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures [J] . Kim Zin-Sig, Lee Hyung Seok, Bae Sung-Bum, Journal of nanoscience and nanotechnology . 2020,第7期

机译：栅极面积下凹陷深度对AlGaN / GaN异质结构上常关场效应晶体管制造的V-Th转变的影响
3. Effects of surface passivation dielectrics on carrier transport in AlGaN/GaN heterostructure field-effect transistors [J] . Sejoon Oh, Han-Soo Jang, Chel-Jong Choi, AIP Advances . 2018,第4期

机译：表面钝化电介质对AlGaN / GaN异质结构场效应晶体管中载流子传输的影响
4. Gate Dielectric Engineering of Sub Quarter Micron AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor (MISHFET) for High Gain Characteristics [C] . Ruchika Aggarwal, Anju Agrawal, Mridula Gupta, International Semiconductor Device Research Symposium . 2007

机译：子四分之一微米AlGaN / GaN金属绝缘子半导体异质结构场效应晶体管（MISHFET）的栅极介电工程用于高增益特性
5. The Effects of Thermal, Strain, and Neutron Irradiation on Defect Formation in AlGaN/GaN High Electron Mobility Transistors and GaN Schottky Diodes [D] . Lin, Chung-Han 2013

机译：热，应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
6. Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors [O] . Peng Cui, Yuanjie Lv, Huan Liu, -1

机译：AlGaN / GaN异质结构场效应晶体管中的极化库仑场散射改善了线性度
7. Investigation of 'high-k' materials as alternative dielectrics for AlGaN/GaN-based metal-insulator-semiconductor heterostructure field effect transistors (MISHFET) [O] . Heidelberger Gero 2009

机译：研究“高k”材料作为AlGaN / GaN基金属-绝缘体-半导体异质结构场效应晶体管（MISHFET）的替代电介质
8. Epitaxial Growths of m-Plane AlGaN/GaN and AlInN/GaN Heterostructures Applicable for Normally-Off Mode High Power Field Effect Transistors on Freestanding GaN Substrates [R] . Chichibu, S., Hazu, K. 2011

机译：m面alGaN / GaN和alInN / GaN异质结构的外延生长适用于常驻型GaN基板上的常关模式高功率场效应晶体管

Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

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