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Novel High Temperature Capacitive Pressure Sensor Utilizing SiC Integrated Circuit Twin Ring Oscillators

机译:利用SiC集成电路双环振荡器的新型高温电容式压力传感器

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This paper describes initial development and testing of a novel high temperature capacitive pressure sensor system. The pressure sensor system consists of two 4H-SiC 11-stage ring oscillators and a SiCN capacitive pressure sensor. One oscillator has the capacitive pressure sensor fixed at one node in its feedback loop and varies as a function of pressure and temperature while the other provides a pressure-independent reference frequency which can be used to temperature compensate the output of the first oscillator. A two-day repeatability test was performed up to 500°C on the oscillators and the oscillator fundamental frequency changed by only 1%. The SiCN capacitive pressure sensor was characterized at room temperature from 0 to 300 psi. The sensor had an initial capacitance of 3.76 pF at 0 psi and 1.75 pF at 300 psi corresponding to a 54 % change in capacitance. The integrated pressure sensor system was characterized from 0 to 300 psi in steps of 50 psi over a temperature range of 25 to 500°C. The pressure sensor system sensitivity was 0.113 kHz/psi at 25°C and 0.026 kHz/psi at 500°C.
机译:本文介绍了新型高温电容式压力传感器系统的初步开发和测试。压力传感器系统包括两个4H-SiC 11级环形振荡器和一个SiCN电容式压力传感器。一个振荡器的电容式压力传感器固定在其反馈回路的一个节点上,并随压力和温度的变化而变化,而另一个则提供与压力无关的参考频率,该参考频率可用于对第一振荡器的输出进行温度补偿。在高达500°C的振荡器上进行了为期两天的重复性测试,并且振荡器基本频率仅变化了1%。 SiCN电容式压力传感器的特点是室温为0至300 psi。传感器在0 psi时的初始电容为3.76 pF,在300 psi时的初始电容为1.75 pF,对应于电容变化54%。集成压力传感器系统的特征是在25至500°C的温度范围内,以50 psi的压力在0至300 psi的范围内进行表征。压力传感器系统的灵敏度在25°C下为0.113 kHz / psi,在500°C下为0.026 kHz / psi。

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