• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>International Conference on Ion Implantation Technology >Aluminum Nitride Ion Production by a Magnetron Sputtering Type Ion Source with a Temperature Controlled Al Target
【24h】

Aluminum Nitride Ion Production by a Magnetron Sputtering Type Ion Source with a Temperature Controlled Al Target

机译：磁控溅射型离子靶磁控溅射离子源生产氮化铝离子

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Aluminum nitride ion beams were extracted from a plasma sputter type ion source with an actively cooled Al sputter target. The Al target holds permanent magnets to form a magnetron magnetic field geometry and excites plasma by the applied 13.56 MHz RF voltage. The extracted ion beam current decreased as the temperature of the target increased due to plasma operation. The active air cooling of the target decreased the temperature to stabilize the intensity of the ion beam current. The active cooling also reduced the amount of dusts formed in the source during the plasma operation.
机译：从具有主动冷却的Al溅射靶的等离子溅射型离子源中提取氮化铝离子束。 Al靶保持永磁体以形成磁控管磁场几何形状并通过施加的13.56MHz RF电压激发等离子体。由于等离子体操作，所提取的离子束电流随着靶的温度升高而降低。靶的主动空气冷却降低了温度，以稳定离子束电流的强度。主动冷却还减少了在等离子运行期间在源中形成的灰尘量。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号