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High Performance and Low Energy Consumption in Phase Change Material RF Switches

机译：相变材料射频开关的高性能和低能耗

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This paper presents a RF to mm-wave switch based on Germanium Telluride phase change material. An integration process compatible with a standard CMOS back end of line is proposed to realize directly heated switches. RF measurements, performed up to 65 GHz, show an ON-state resistance of 1Ω with an OFF-state capacitance of 7 fF corresponding to a 22 THz cutoff frequency which constitutes a state-of-the-art Figure-of-Merit. Switching time of only 60 ns in both phase changes allow energy consumption one decade lower than the state-of-the-art for crystallization. A geometrical variation of GeTe dimensions shows a linear evolution of RF performance in terms of ON-state resistance and an almost unchanged performance in the OFF-state.
机译：本文介绍了一种基于碲化锗相变材料的射频至毫米波开关。提出了与标准CMOS后端生产线兼容的集成工艺，以实现直接加热的开关。在高达65 GHz的频率下进行的RF测量显示，导通电阻为1Ω，关断电容为7 fF，对应于22 THz截止频率，这构成了最先进的品质因数。两个相变中的切换时间仅为60 ns，使能量消耗比最新的结晶技术低十倍。 GeTe尺寸的几何变化表明，根据导通状态电阻，RF性能呈线性变化，而处于截止状态时，性能几乎保持不变。

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