2O Analysis of Al2O3 high-k gate dielectric effect on the electrical characteristics of a 4H-SiC low-power MOSFET
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Analysis of Al2O3 high-k gate dielectric effect on the electrical characteristics of a 4H-SiC low-power MOSFET

机译：Al2O3高k栅极介电效应对4H-SiC低功率MOSFET电学特性的影响分析

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The work investigates the ability of a high-k gate dielectric material (Al2O3) in improving the electrical performance of a low voltage 4H-SiC-based MOSFET. Such a device could be used, for example, as a low-power device in DC. DC converters for photovoltaic applications. We found that an Al2O3 gate oxide layer determines a higher channel mobility, a lower oxide electric field, a good threshold voltage stability, and a low on-state resistance which is on the order of 160 kΩ × µm2. Although our investigations show that a gate oxide dielectric with high relative permittivity considerably improves the electrical behavior of a MOSFET in 4H-SiC, the off-state leakage current have to be carefully evaluated for a device practical use.
机译：这项工作研究了高k栅极介电材料（Al 2 Ø 3 ），以改善低压4H-SiC基MOSFET的电气性能。这样的设备可以用作例如DC中的低功率设备。光伏应用的直流转换器。我们发现一个铝 2 Ø 3 栅极氧化层决定了较高的沟道迁移率，较低的氧化电场，良好的阈值电压稳定性和低导通电阻，约为160kΩ×µm 2 。尽管我们的研究表明，具有高相对介电常数的栅极氧化物电介质可以显着改善4H-SiC中MOSFET的电性能，但对于器件的实际使用，必须仔细评估其断态泄漏电流。

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