Improvement of metal gate/high-K dielectric CMOSFETs characteristics by atomic layer etching of high-K gate dielectric

著录项

• 来源
  《Solid-State Electronics》 |2013年第4期|82-85|共4页
• 作者

  K.S. Min; C. Park; C.Y. Kang; C.S. Park; B.J. Park; Y.W. Kim; B.H. Lee; Jack C. Lee; G. Bersuker; P. Kirsch; R. Jammy; G.Y. Yeom;

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• 作者单位

  Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Cyeonggi-do 440-746, Republic of Korea,Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Republic of Korea,SEMATECH. Austin, TX 78741, USA;

  SEMATECH. Austin, TX 78741, USA;

  SEMATECH. Austin, TX 78741, USA;

  SEMATECH. Austin, TX 78741, USA;

  Process Development Team, Semiconductor R&D Center, Samsung Electronics, San #16 Banwol-Dong, Hwasung-City, Gyeonggi-Do 445-701, Republic of Korea;

  Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Republic of Korea;

  Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Cwangju 500-712, Republic of Korea;

  Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78758, USA;

  SEMATECH. Austin, TX 78741, USA;

  SEMATECH. Austin, TX 78741, USA;

  SEMATECH. Austin, TX 78741, USA;

  Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Cyeonggi-do 440-746, Republic of Korea;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  plasma induced damage; atomic layer etching; high-k dielectric; complementary metal-oxide-; semiconductor field effect transistors; (cmosfets);

  机译：血浆诱导的损伤;原子层蚀刻高介电常数互补金属氧化物半导体场效应晶体管;（cmosfets）;