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首页> 外文会议>International Workshop on Low Temperature Bonding for 3D Integration >Room-temperature pressureless wafer sealing using ultrathin Au films activated by Ar plasma
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Room-temperature pressureless wafer sealing using ultrathin Au films activated by Ar plasma

机译：使用AR等离子激活的Ulthath Au薄膜的室温无压晶片密封

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摘要

Silicon wafers with cavities and Si cap wafers were bonded by Au-Au surface activated bonding using ultrathin Au films (thickness: 15 nm) to achieve wafer-scale sealing. Pressurelessbonding (wafer pairs were simply placed in contact) was performed at room temperature in ambient air after surface activation by Ar plasma treatment. Bonding strength was measured using a razor blade test. Bonding strong enough to be broken from Si wafers was obtained. Evaluation of sealing quality with a He leak tester showed that the leak rate was below the lower limit of the tester (<; 1.6×10-10 Pa·m3/s).
机译：具有空腔和Si盖晶片的硅晶片通过使用超薄Au膜（厚度：15nm）键合的Au-Au表面活化键合，以实现晶片级密封。通过AR等离子体处理后，在室温下在室温下在室温下在室温下在室温下在室温下进行压力释放。使用剃刀刀片试验测量粘合强度。获得了足够强的粘接力，以从Si晶片坏。利用HE泄漏测试仪评估密封质量表明，泄漏率低于测试仪的下限（<; 1.6×10 -10 PA·M. 3 / s）。

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