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首页> 美国卫生研究院文献>Micromachines >Effect of Au Film Thickness and Surface Roughness on Room-Temperature Wafer Bonding and Wafer-Scale Vacuum Sealing by Au-Au Surface Activated Bonding
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Effect of Au Film Thickness and Surface Roughness on Room-Temperature Wafer Bonding and Wafer-Scale Vacuum Sealing by Au-Au Surface Activated Bonding

机译：金膜厚度和表面粗糙度对室温晶圆键合和金-金表面活化键合的晶圆级真空密封的影响

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摘要

Au-Au surface activated bonding (SAB) using ultrathin Au films is effective for room-temperature pressureless wafer bonding. This paper reports the effect of the film thickness (15–500 nm) and surface roughness (0.3–1.6 nm) on room-temperature pressureless wafer bonding and sealing. The root-mean-square surface roughness and grain size of sputtered Au thin films on Si and glass wafers increased with the film thickness. The bonded area was more than 85% of the total wafer area when the film thickness was 100 nm or less and decreased as the thickness increased. Room-temperature wafer-scale vacuum sealing was achieved when Au thin films with a thickness of 50 nm or less were used. These results suggest that Au-Au SAB using ultrathin Au films is useful in achieving room-temperature wafer-level hermetic and vacuum packaging of microelectromechanical systems and optoelectronic devices.
机译：使用超薄Au膜的Au-Au表面活化键合（SAB）对于室温无压晶圆键合有效。本文报道了膜厚（15–500 nm）和表面粗糙度（0.3–1.6 nm）对室温无压晶圆键合和密封的影响。 Si和玻璃晶片上溅射的Au薄膜的均方根表面粗糙度和晶粒尺寸随膜厚度的增加而增加。当膜厚度为100nm以下时，结合面积大于晶片总面积的85％，并且随着厚度增​​加而减小。当使用厚度为50nm或更小的Au薄膜时，实现了室温晶片级真空密封。这些结果表明，使用超薄Au膜的Au-Au SAB可用于实现微机电系统和光电器件的室温晶圆级密封和真空包装。

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