首页> 外文会议>International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems >Reliability Assessment of Ag Sintered Joints Using a SiC Semiconductor and Determination of Failure Mechanism in the Field of Power Electronics
【24h】

Reliability Assessment of Ag Sintered Joints Using a SiC Semiconductor and Determination of Failure Mechanism in the Field of Power Electronics

机译:用SiC半导体对Ag烧结接头的可靠性评估及其在电力电子领域的失效机理确定。

获取原文

摘要

Sintered Ag (SAG) is nowadays used for die attach in field of automotive power electronics. Nevertheless, failure mechanisms in this porous layer under different loading conditions are not completely understood yet. Different joined materials like SiC (di
机译:如今,烧结银(SAG)已用于汽车电力电子领域的芯片贴装。然而,该多孔层在不同载荷条件下的破坏机理尚未完全理解。 SiC(di

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号