A Novel 6.5 kV Innovative Silicon Power Device (i-Si) with a Digital Carrier Control Drive (DCC-drive)

机译：具有数字载波控制驱动器（DCC驱动器）的新型6.5 kV创新型硅功率器件（i-Si）

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A novel system configuration of 6.5 kV rated i nnovative si licon (i-Si) power module combining a d igital c arrier c ontrol drive (DCC-drive) is proposed. Controlling the stored carriers’ density dynamically using digital signals through gate driver during the conduction of Dual side-gate hi gh-conductivity IG BT (Dual-gate HiGT) and a MOS controllable stored-carrier d iode (MOSD) can break through the leading-edge IGBT’s loss limit. A simulated 6.5 kV inverter system demonstrated -25% power loss from leading-edge IGBTs.

机译：提出了一种结合数字小车控制驱动器（DCC驱动器）的6.5 kV额定创新型硅（i-Si）电源模块的新型系统配置。在双侧栅极高导电性IG BT（Dual-gate HiGT）和MOS可控的存储载流子二极管（MOSD）导通期间，通过栅极驱动器使用数字信号动态控制存储的载流子密度可以突破边IGBT的损耗极限。模拟的6.5 kV逆变器系统显示出领先的IGBT产生-25％的功率损耗。

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《International Symposium on Power Semiconductor Devices and ICs》|2020年|46-49|共4页
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Tomoyuki Miyoshi; Hiroshi Suzuki; Tomoyasu Furukawa; So Watanabe; Masaki Shiraishi; Yujiro Takeuchi; Mutsuhiro Mori;
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IGBT; Dual-gate HiGT; MOSD; DCC-drive;

机译：IGBT;双栅极HiGT; MOSD; DCC驱动;

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1. Design Comparison of High-Power Medium-Voltage Converters Based on a 6.5-kV Si-IGBT/Si-PiN Diode, a 6.5-kV Si-IGBT/SiC-JBS Diode, and a 10-kV SiC-MOSFET/SiC-JBS Diode [J] . Mirzaee H., De A., Tripathi A., Industry Applications, IEEE Transactions on . 2014,第4期

机译：基于6.5 kV Si-IGBT / Si-PiN二极管，6.5 kV Si-IGBT / SiC-JBS二极管和10kV SiC-MOSFET / SiC-JBS的大功率中压转换器的设计比较二极管
2. Monolithic integration of low voltage devices in 3 kV planar MOS controlled power devices [J] . C.K. Ngw, M. Sweet, J.V. Subhas Chandra Bose Solid-State Electronics . 2001,第1期

机译：3 kV平面MOS控制功率器件中低压器件的单片集成
3. Design considerations for 6.5 kV IGBT devices [J] . M. Vellvehi, D. Flores, X. Jorda, Microelectronics journal . 2004,第3期

机译：6.5 kV IGBT器件的设计注意事项
4. An innovative silicon power device (i-Si) through time and space control of a stored carrier (TASC) [C] . Mutsuhiro Mori, Tomoyuki Miyoshi, Tomoyasu Furukawa, International Symposium on Power Semiconductor Devices and IC's . 2018

机译：通过对存储载流子（TASC）进行时空控制的创新型硅功率器件（i-Si）
5. Medium Voltage High Power Grid Connected Three Phase Converters Enabled by 15 kV Silicon Carbide Power Devices. [D] . Madhusoodhanan, Sachin. 2016

机译：由15 kV碳化硅功率器件实现的中压大功率并网三相逆变器。
6. Artificial Intelligence–Powered Digital Health Platform and Wearable Devices Improve Outcomes for Older Adults in Assisted Living Communities: Pilot Intervention Study [O] . Gerald Wilmink, Katherine Dupey, Schon Alkire, 2020

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7. Moving towards high carrier mobility power devices in silicon and silicon carbide [O] . Rossmann Harald R. 2016

机译：迈向硅和碳化硅中的高载流子迁移率功率器件

A Novel 6.5 kV Innovative Silicon Power Device (i-Si) with a Digital Carrier Control Drive (DCC-drive)

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