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首页> 外文会议>Photomask and X-Ray Mask Technology II >High-precision EB technology with thin EB resist and distortion-free mask holder for x-ray mask fabrication
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High-precision EB technology with thin EB resist and distortion-free mask holder for x-ray mask fabrication

机译：高精度EB技术，具有薄的EB抗蚀剂和用于X射线光罩制造的无变形光罩支架

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Abstract: EB lithography and dry etching technology have been investigated to improve EB pattern resolution and pattern placement accuracy. High selective reactive ion etching of W absorber and thin EB resist process have been developed adopting intermediate Ti mask layer between the EB resist and W. The EB resist pattern resolution on the W absorber covered by thin Ti mask layer was improved by thinning EB resist and it became possible to obtain 0.12 $mu@m-pitch line/space pattern with 0.1 $mu@m- thick EB resist. Pattern size decrement for the designed pattern size was also effective to improve the resist pattern resolution. The W absorber was etched with very high selectivity above 500 to the Ti mask layer using Cl$-2$/ $PLU O$-2$/ gas system. Using this RIE technique, it became possible to etch 0.7 $mu@m-thick W absorber with 0.05 $mu@m-thick EB resist and 0.03 $mu@m-thick Ti mask layer. Further, a distortion-free X-ray mask holder for EB writing system has been developed, which is estimated to reduce pattern displacement caused by mask clamping to less than 3 nm within a radius of 10 mm exposure field as far as the clamping distortion was concerned.!6
机译：摘要：已经研究了EB光刻和干蚀刻技术，以提高EB模式分辨率和图案放置精度。在EB抗蚀剂和W之间采用中间Ti掩模层开发了W吸收剂和薄抗EB抗蚀剂处理的高选择性反应离子蚀刻。通过薄抗体和薄Ti掩模层覆盖的W吸收器上的EB抗蚀剂图案分辨率进行了改善它可以获得0.12 $ MU @ M-PING线/空间模式，具有0.1 $ MU @ M-厚的EB抗蚀剂。设计图案尺寸的图案尺寸减小也有效地改善抗蚀剂图案分辨率。使用CL-$-$ / $ plu o $ -2 $ /天然气系统，用高于500的选择性蚀刻在500粒以上的镜片。使用此RIE技术，可以使用0.05 $ MU @ M厚的EB抗蚀剂和0.03 $ MU @ M厚的TI掩模层来蚀刻0.7 $ MU @ M厚的W吸收剂。此外，已经开发出用于EB写入系统的无失真X射线掩模支架，其估计，只要夹紧失真是在10mm曝光场的半径内掩模夹持到小于3nm的图案位移有关。！6

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