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Stacking fault trapezoids, stacking fault tubes and stacking fault tetrahedra in ZnSe/GaAs(001) pseudomorphic epilayers

机译:ZnSe / GaAs(001)拟晶外延层中的堆积断层梯形,堆积断层管和堆积四面体

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The fault planes and stair-rod dislocations in stacking fault trapezoid, stacking fault tube and stacking fault tetrahedron have been characterized with reference to the stacking fault pyramid in ZnSe/GaAs(001) pseudomorphic epilayers. All stacking fault configurations can be regarded as originating from an array of dimers on the (001) interface. The extended stair-rod dislocation dipoles in stacking fault trapezoids and tubes can act as diffusion channels for pipe diffusion of point defects during degradation.
机译:参照ZnSe / GaAs(001)拟晶外延层中的堆积断层金字塔,对堆积断层梯形,堆积断层管和堆积断层四面体中的断面和阶梯错位进行了表征。所有堆叠故障配置都可以视为源自(001)接口上的一组二聚体。堆叠断层梯形和管中延伸的阶梯杆位错偶极子可充当扩散通道,以在退化期间使点缺陷通过管道扩散。

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