Abstract: High-temperature measurements at 973(673)K of electron (hole) concentration in Ge-doped CdTe crystals were performed under partial Cd and Te pressure. The results are compared with point-defect concentrations, calculated by use of approximated or full electroneutrality condition. The importance of the doped crystal thermal prehistory is evidenced. It determines the Ge in Cd sites to Ge in Te ones ratio, thus influences the electrical and optical properties of the crystal. !7
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