Porous silicon as an inherent surface enlarging layer for improved electrode performance in stimulation and recording applications

机译：多孔硅作为固有的表面扩大层，可改善刺激和记录应用中的电极性能

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The performance of doped silicon and porous silicon as a new electrode material in neurophysiological applications is investigated. By increasing the surface area of adopted silicon region through anodisation in hydrofluoric acid it was found that the impedance parameters of the electrode were considerably improved. Impedance spectra of bare silicon electrodes, porous electrodes and platinum electroplated porous silicon electrodes are presented. It was found that porous silicon electrodes display a 2.5 times higher capacitance and the platinum electroplated porous silicon electrode displayed a 5 times higher capacitance when compared to the corresponding planar doped silicon electrode.

机译：研究了掺杂硅和多孔硅作为新型电极材料在神经生理学中的性能。通过在氢氟酸中进行阳极氧化来增加所采用的硅区域的表面积，发现电极的阻抗参数得到了显着改善。给出了裸露的硅电极，多孔电极和电镀铂的多孔硅电极的阻抗谱。已经发现，与相应的平面掺杂硅电极相比，多孔硅电极显示出2.5倍的电容，而电镀铂的多孔硅电极显示出5倍的电容。

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《Engineering in Medicine and Biology Society, 1998. Proceedings of the 20th Annual International Conference of the IEEE》|1998年|P.2229-2231|共3页
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Bengtsson; M.; Wallman; L.;
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中图分类无线电电子学、电信技术;
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Porous silicon as an inherent surface enlarging layer for improved electrode performance in stimulation and recording applications

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