Sputter-deposited W-based contacts on p-GaN (N sub -10 sub 18 cm sub -30 display non-ohmic behavior independent of annealing temperature when measured at 25 degree. The transition to ohmic behavior occurs above -250 degree as more of the acceptors become ionized. The optimum annealing temperature is -700 degree under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization. which shows a severely degraded morphology even at 700 degree. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves iwht annealing up to -900 degree.
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机译：p-GaN上的溅射沉积W基接触（N sub -10 sub 18 cm sub -30在25度下测量时显示出与退火温度无关的非欧姆行为。-250度以上时，向欧姆行为的转变随着温度的升高而增加。在这种条件下，最佳退火温度为-700度，这些触点的热稳定性比传统的Ni / Au金属化高得多，即使在700度时，其形态也会严重劣化。W基触点可能是欧姆性的沉积在非常重掺杂的n-GaN上，其比接触电阻可将退火提高到-900度。
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