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首页> 外文会议>Symposium on GaN and related alloys >Electron beam induced impurity electro-migration in unintentionally doped GaN
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Electron beam induced impurity electro-migration in unintentionally doped GaN

机译：电子束在无意掺杂的GaN中引起的杂质电迁移

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Electron beam induced electromigration of O sup + sub N and H sup + impurities in unintentionally n-doped GaN was investigated using cathodoluminescence (CL) kinetics profiling, CL imaging of regions pre-irradiated with a stationary electron beam, and wavelength dispersive x-ray spectrometry (WDS). The presented results (i) illustrate induced impurity diffusion in wide bandgap semiconductors, (ii) provide experimental evidence for the (V sub Ga-O sub N) sup 2- model of yellow luminescence in GaN with low Si content sup 1, (iii) confirm the roles of O in frequently reported bound exciton and donor-acceptor pair emissions and (iv) suggest the involvement of O sup + sub N and hydrogenated gallium vacancies in a blue emission in autodoped GaN.
机译：利用阴极发光（CL）动力学分析，固定电子束预辐照区域的CL成像和波长色散X射线研究了电子束在无意掺N的GaN中的O sup + sub N和H sup +杂质的电子束诱导电迁移。光谱仪（WDS）。呈现的结果（i）说明了宽带隙半导体中的诱导杂质扩散，（ii）为低Si含量的GaN中黄色发光的（V sub Ga-O sub N）sup 2-模型提供了实验证据sup 1，（iii ）确认O在经常报告的约束激子和供体-受体对发射中的作用，并且（iv）建议O sup +亚N和氢化镓空位参与自动掺杂GaN的蓝色发射。

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