Generation recombination noise in GaN photoconduction detectors

机译：GaN光电导检测器中的产生复合噪声

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Low frequency noise measurements are a powerful tool for detecting deep traps in semiconductor devices and investigating trapping-recombination mechanisms. We have performed low frequency noise measurements on a number of photoconducting detectors fabricated on autodoped n-GaN films grown by ECR-MBE. At room temperature, the noise spectrum is dominated by l/f noise and thermal noise for low resistivity material and by generationrecombination (G-R) noise for high resistivity material. Noise characteristics were measured as a function of temperature in the 80K to 300K, G-R noise is dominant. Optical excitation revealed the presence of traps not observed in the dark, at room temperature.

机译：低频噪声测量是检测半导体器件中深陷阱并研究陷阱-复合机制的有力工具。我们已经对许多由ECR-MBE生长的自动掺杂n-GaN薄膜上制造的光电导检测器进行了低频噪声测量。在室温下，对于低电阻率的材料，噪声频谱主要受1 / f噪声和热噪声的影响，而对于高电阻率的材料则受世代复合（G-R）噪声的影响。在80K至300K范围内，测量噪声特性随温度的变化，其中G-R噪声占主导地位。光学激发揭示了在室温下在黑暗中未观察到的陷阱的存在。

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《Symposium on GaN and related alloys》|1999年|p.G7.8.1-6|共1页
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M.Misra; D.Doppalapudi; A.V.Sampath; T.D.Moustakas; P.H.McDonald;
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中图分类金属学与金属工艺;
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1. GENERATION-RECOMBINATION NOISE IN GaN-BASED DEVICES [J] . SERGEY L. RUMYANTSEV, NEZIH PALA, MICHAEL S. SHUR, International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics . 2004,第1期

机译：GaN基器件中的产生复合噪声
2. Generation-Recombination Noise: The Fundamental Sensitivity Limit for Kinetic Inductance Detectors [J] . P.J. de Visser, J.J.A. Baselmans, P. Diener, Journal of Low Temperature Physics . 2012,第3a4期

机译：产生复合噪声：动感检测器的基本灵敏度极限
3. Generation-recombination noise and photo-induced transient conductivity in epitaxial CdHgTe long wavelength infrared detectors [J] . Nichols Paul, Carolyne M. Van Vilet, Sylvia Mergui Journal of Crystal Growth . 1999,第3期

机译：外延CdHgTe长波长红外探测器中的产生复合噪声和光诱导瞬态电导率
4. Generation recombination noise in GaN photoconduction detectors [C] . M.Misra, D.Doppalapudi, A.V.Sampath, Symposium on GaN and related alloys . 1999

机译：GaN光电驱动探测器中的一代重组噪声
5. Low-frequency bulk and surface generation-recombination noise simulations of semiconductor devices. [D] . Hou, Fan-Chi (Frank). 2002

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Generation recombination noise in GaN photoconduction detectors

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