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Niln as an ohmic contact to P-GaN

机译：镍作为P-GaN的欧姆接触

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Based on the criteria for the solid state exchange reaction with p-GaN, we have investigated the intermetallic compound NiIn as a possible ohmic contact. The contacts were fabricated by dopositing NiIn on p-GaN films (p-2x10 sup 17 cm sup -3) using RF sputtering from a compound target. The as-deposited, NiIn contacts were found to be rectifying and using I-V characterization a Schottky barrier height of 0.82 eV was measured. Rapid thermal annealing of the contacts was shown to significantly decrease their resistance, with contacts annealsed at 800 degree for 1 min yielding the lowest resistance of 8-9x10 sup -3 omega cm sup 2, as measured by the circular transmission line model. To allow a more universal comparison the more traditional Ni/Au contacts, processed under the same conditions, were used as a standard, Their measured specific contact resistance (p sub c=1.2-2.1x10 sup -2 omega cm sup 2) was significantly higher than that of the NiIn contacts. Demonstrating that NiIn has promise as an ohmic contact to p-GaN and should be studied in greater detail.
机译：基于与p-GaN进行固态交换反应的标准，我们研究了金属间化合物NiIn作为可能的欧姆接触。通过使用RF溅射从复合靶材在p-GaN膜（p-2x10 sup 17 cm sup -3）上沉积NiIn来制造触点。发现沉积的NiIn触点可以整流，并使用I-V表征，测得的肖特基势垒高度为0.82 eV。触点的快速热退火显示出显着降低其电阻的效果，触点在800度下退火1分钟，产生的最低电阻为8-9x10 sup -3Ωcm cm sup 2，这是通过圆形传输线模型测得的。为了进行更广泛的比较，将在相同条件下处理的更传统的Ni / Au触点用作标准，它们的比电阻（p sub c = 1.2-2.1x10 sup -2 omega cm sup 2）显着提高。高于NiIn触点。证明NiIn具有与p-GaN形成欧姆接触的前景，应进行更详细的研究。

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